Wafer-level selective transfer method for FBAR-LSI Integration

Kousuke Hikichi, Kazushi Seiyama, Masanori Ueda, Shinji Taniguchi, Ken Ya Hashimoto, Masayoshi Esashi, Shuji Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)


This paper reports the wafer-bonding-based integration of heterogeneous devices with different die sizes by laser-assisted selective device transfer technique. 1 mm × 1 mm FBAR (film bulk acoustic resonator) dies supported with a glass wafer were selectively transferred to a wafer of 2 mm × 2 mm BiCMOS sustaining amplifiers by low temperature Au-Au bonding. The FBAR dies left on the support glass wafer were transferred to other BiCMOS wafers, and 4 times of integration were done in total using the same FBAR wafer. The integrated device worked as a chip-size-packaged 2 GHz timing oscillator, and a phase noise of -103 dBc/Hz at 10 kHz offset and -155 dBc/Hz at 1 MHz offset was confirmed.

Original languageEnglish
Title of host publicationIFCS 2014 - 2014 IEEE International Frequency Control Symposium, Proceedings
PublisherIEEE Computer Society
ISBN (Print)9781479949168
Publication statusPublished - 2014 Jan 1
Event2014 IEEE International Frequency Control Symposium, IFCS 2014 - Taipei, Taiwan, Province of China
Duration: 2014 May 192014 May 22


Other2014 IEEE International Frequency Control Symposium, IFCS 2014
CountryTaiwan, Province of China


  • Au-Au bonding
  • FBAR oscillator
  • Integration
  • Selective transfer
  • Wafer-level packaging

ASJC Scopus subject areas

  • Control and Systems Engineering

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