Wafer-level MEMS package and its reliability issues

Shuji Tanaka, Masayoshi Esashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper reviews wafer-level hermetic packaging technology using anodic bonding from several reliability points of view. First, reliability risk factors of high temperature, high voltage and electrochemical O2 generation during anodic bonding are discussed. Next, electrical interconnections through a hermetic package, i.e. electrical feedthrough, is discussed. The reliability of both hermetic sealing and electrical feedthrough must be simultaneously satisfied. A new wafer-level MEMS packaging material, anodically-bondable low temperature cofired ceramic (LTCC) wafer, is introduced, and its reliability data on hermetic sealing, electrical interconnection and flip-chip mounting on a printed circuit board (PCB) are described.

Original languageEnglish
Title of host publication2013 IEEE International Reliability Physics Symposium, IRPS 2013
Pages6B.1.1-6B.1.5
DOIs
Publication statusPublished - 2013 Aug 7
Event2013 IEEE International Reliability Physics Symposium, IRPS 2013 - Monterey, CA, United States
Duration: 2013 Apr 142013 Apr 18

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other2013 IEEE International Reliability Physics Symposium, IRPS 2013
Country/TerritoryUnited States
CityMonterey, CA
Period13/4/1413/4/18

Keywords

  • Anodic bonding
  • Electrical feedthrough
  • Low temperature cofired ceramics (LTCC)
  • Micro electro mechanical systems (MEMS)
  • Wafer-level packaging

ASJC Scopus subject areas

  • Engineering(all)

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