Wafer bonding of polycrystalline spinel with LiNbO3/LiTaO 3 for temperature compensation of RF surface acoustic wave devices

K. Geshi; K. Teraoka; S. Kinoshita; M. Nakayama; Y. Imagawa; S. Nakayama; K. Hashimoto; S. Tanaka; K. Totsu; H. Takagi

doi:10.1109/ULTSYM.2012.0683

Wafer bonding of polycrystalline spinel with LiNbO₃/LiTaO ₃ for temperature compensation of RF surface acoustic wave devices

K. Geshi, K. Teraoka, S. Kinoshita, M. Nakayama, Y. Imagawa, S. Nakayama, K. Hashimoto, S. Tanaka, K. Totsu, H. Takagi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

This paper proposes use of polycrystalline spinel for the temperature compensation of RF surface acoustic wave (SAW) devices. Spinel can be bonded with LiTaO₃ (LT) and LiNbO₃ (LN) wafers by using adhesive and direct bonding techniques. A series of RF SAW resonators were fabricated on the LT(LN)/spinel structure, and their performance including the temperature coefficient of frequency (TCF) was measured. For comparison, SAW resonators employing Si, sapphire and alumina in place of spinel were also fabricated. The result indicated that the polycrystalline spinel offers TCF improvement better than the other materials.

Original language	English
Title of host publication	2012 IEEE International Ultrasonics Symposium, IUS 2012
Pages	2726-2729
Number of pages	4
DOIs	https://doi.org/10.1109/ULTSYM.2012.0683
Publication status	Published - 2012 Dec 1
Event	2012 IEEE International Ultrasonics Symposium, IUS 2012 - Dresden, Germany Duration: 2012 Oct 7 → 2012 Oct 10

Publication series

Name	IEEE International Ultrasonics Symposium, IUS
ISSN (Print)	1948-5719
ISSN (Electronic)	1948-5727

Other

Other	2012 IEEE International Ultrasonics Symposium, IUS 2012
Country/Territory	Germany
City	Dresden
Period	12/10/7 → 12/10/10

Keywords

SAW resonator
spinel
temperature coefficient of frequency
temperature compensation
wafer bonding

ASJC Scopus subject areas

Acoustics and Ultrasonics

Access to Document

10.1109/ULTSYM.2012.0683

Cite this

Geshi, K., Teraoka, K., Kinoshita, S., Nakayama, M., Imagawa, Y., Nakayama, S., Hashimoto, K., Tanaka, S., Totsu, K., & Takagi, H. (2012). Wafer bonding of polycrystalline spinel with LiNbO₃/LiTaO ₃ for temperature compensation of RF surface acoustic wave devices. In 2012 IEEE International Ultrasonics Symposium, IUS 2012 (pp. 2726-2729). [6561988] (IEEE International Ultrasonics Symposium, IUS). https://doi.org/10.1109/ULTSYM.2012.0683

Wafer bonding of polycrystalline spinel with LiNbO₃/LiTaO ₃ for temperature compensation of RF surface acoustic wave devices. / Geshi, K.; Teraoka, K.; Kinoshita, S.; Nakayama, M.; Imagawa, Y.; Nakayama, S.; Hashimoto, K.; Tanaka, S.; Totsu, K.; Takagi, H.

2012 IEEE International Ultrasonics Symposium, IUS 2012. 2012. p. 2726-2729 6561988 (IEEE International Ultrasonics Symposium, IUS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Geshi, K, Teraoka, K, Kinoshita, S, Nakayama, M, Imagawa, Y, Nakayama, S, Hashimoto, K, Tanaka, S , Totsu, K & Takagi, H 2012, Wafer bonding of polycrystalline spinel with LiNbO₃/LiTaO ₃ for temperature compensation of RF surface acoustic wave devices. in 2012 IEEE International Ultrasonics Symposium, IUS 2012., 6561988, IEEE International Ultrasonics Symposium, IUS, pp. 2726-2729, 2012 IEEE International Ultrasonics Symposium, IUS 2012, Dresden, Germany, 12/10/7. https://doi.org/10.1109/ULTSYM.2012.0683

Geshi K, Teraoka K, Kinoshita S, Nakayama M, Imagawa Y, Nakayama S et al. Wafer bonding of polycrystalline spinel with LiNbO₃/LiTaO ₃ for temperature compensation of RF surface acoustic wave devices. In 2012 IEEE International Ultrasonics Symposium, IUS 2012. 2012. p. 2726-2729. 6561988. (IEEE International Ultrasonics Symposium, IUS). https://doi.org/10.1109/ULTSYM.2012.0683

Geshi, K. ; Teraoka, K. ; Kinoshita, S. ; Nakayama, M. ; Imagawa, Y. ; Nakayama, S. ; Hashimoto, K. ; Tanaka, S. ; Totsu, K. ; Takagi, H. / Wafer bonding of polycrystalline spinel with LiNbO₃/LiTaO ₃ for temperature compensation of RF surface acoustic wave devices. 2012 IEEE International Ultrasonics Symposium, IUS 2012. 2012. pp. 2726-2729 (IEEE International Ultrasonics Symposium, IUS).

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AU - Imagawa, Y.

AU - Nakayama, S.

AU - Hashimoto, K.

AU - Tanaka, S.

AU - Totsu, K.

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