WA-B8 Double-Heterostructure Ga0.47In0.53 As MESFET's

H. Ohno, J. Barnard, C. E.C. Wood, L. F. Eastman

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)2198
Number of pages1
JournalIEEE Transactions on Electron Devices
Volume27
Issue number11
DOIs
Publication statusPublished - 1980 Nov
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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