W delta doping in Si(1 0 0) using ultraclean low-pressure CVD

Toshiyuki Kanaya, Masao Sakuraba, Junichi Murota

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


W delta doping in Si epitaxial growth by WF 6 and SiH 4 reaction has been investigated using an ultraclean cold-wall low-pressure chemical vapor deposition (CVD) system. Atomic-layer order W deposition is performed on wet-cleaned Si(1 0 0) substrate at 100 °C using WF 6 and SiH 4 . Si epitaxial growth is achieved by SiH 4 reaction at 480 °C on 4 × 10 13 cm -2 W deposited Si(1 0 0), however, it is found that almost all the deposited W atoms segregate on the deposited Si film. It is also found that such segregation is suppressed by the atomic-order W diffusion into Si(100) substrate by the heat treatment at 520 °C before the Si deposition. In the case of the Si film deposited on the 1.3 × 10 14 cm -2 W diffused Si, the reflection high-energy electron diffraction (RHEED) pattern indicates the crystallinity and the roughness degrade. In the case of the Si film deposited on the 5 × 10 13 cm -2 W diffused Si, the RHEED pattern shows streaks with Kikuchi lines. As a result, the W delta doping in the Si epitaxial growth is achieved, in which the W concentration is as high as 6 × 10 20 cm -3 and the incorporated W atoms is confined within 2 nm-thick region.

Original languageEnglish
Pages (from-to)684-688
Number of pages5
JournalApplied Surface Science
Issue numberSPEC.
Publication statusPublished - 2003 May 15
Externally publishedYes


  • Chemical vapor deposition
  • Si epitaxial growth
  • SiH
  • W delta doping
  • WF

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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