This paper demonstrates the SiGe TX-IC for W-CDMA mobile terminals. For the TX-IC, a novel architecture of a variable gain amplifier is proposed to improve dynamic range and power control accuracy. With the 0.5 μm SiGe BiCMOS technology, this TX-IC achieved over 100 dB dynamic ranges within ±1.5dB accuracy over all temperatures. Output power of 7 dBm can be achieved by employment of P-MOSFET current mirror type self bias control circuit for the driver amplifier. Measurement results also satisfy the specification defined by 3GPP.
|Number of pages||4|
|Publication status||Published - 2002|
|Event||2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Seatle, WA, United States|
Duration: 2002 Jun 2 → 2002 Jun 4
|Other||2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium|
|Period||02/6/2 → 02/6/4|
ASJC Scopus subject areas