W-CDMA SiGe TX-IC with high dynamic range and high power control accuracy

Hiroyuki Joba, Yoshinori Takahashi, Yoshinori Matsunami, Kenji Itoh, Shintaro Shinjo, Noriharu Suematsu, Duljit S. Malhi, Dawn Wang, Kurt Schelkle, Peter Bacon

Research output: Contribution to conferencePaperpeer-review

14 Citations (Scopus)

Abstract

This paper demonstrates the SiGe TX-IC for W-CDMA mobile terminals. For the TX-IC, a novel architecture of a variable gain amplifier is proposed to improve dynamic range and power control accuracy. With the 0.5 μm SiGe BiCMOS technology, this TX-IC achieved over 100 dB dynamic ranges within ±1.5dB accuracy over all temperatures. Output power of 7 dBm can be achieved by employment of P-MOSFET current mirror type self bias control circuit for the driver amplifier. Measurement results also satisfy the specification defined by 3GPP.

Original languageEnglish
Pages27-30
Number of pages4
Publication statusPublished - 2002
Externally publishedYes
Event2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Seatle, WA, United States
Duration: 2002 Jun 22002 Jun 4

Other

Other2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Country/TerritoryUnited States
CitySeatle, WA
Period02/6/202/6/4

ASJC Scopus subject areas

  • Engineering(all)

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