Vth fluctuation induced by statistical variation of pocket dopant profile

T. Tanaka; T. Usuki; T. Futatsugi; Y. Momiyama; T. Sugii

V_th fluctuation induced by statistical variation of pocket dopant profile

T. Tanaka, T. Usuki, T. Futatsugi, Y. Momiyama, T. Sugii

Research output: Contribution to journal › Conference article › peer-review

Abstract

The effect of pocket (halo) profile on the Vth fluctuation due to statistical dopant variation by measurement and simulation was studied. The pocket profile increased the Vth symmetry along with a pocket dose. Vth fluctuaion was enhanced by a factor of greater than 15% due to the pocket profiles. This was attributed to the shrinkage of the area by the pocket dopants.

Original language	English
Pages (from-to)	271-274
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2000 Dec 1
Externally published	Yes
Event	2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States Duration: 2000 Dec 10 → 2000 Dec 13

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Vth fluctuation induced by statistical variation of pocket dopant profile",

abstract = "The effect of pocket (halo) profile on the Vth fluctuation due to statistical dopant variation by measurement and simulation was studied. The pocket profile increased the Vth symmetry along with a pocket dose. Vth fluctuaion was enhanced by a factor of greater than 15% due to the pocket profiles. This was attributed to the shrinkage of the area by the pocket dopants.",

author = "T. Tanaka and T. Usuki and T. Futatsugi and Y. Momiyama and T. Sugii",

year = "2000",

month = dec,

day = "1",

language = "English",

pages = "271--274",

journal = "Technical Digest - International Electron Devices Meeting",

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note = "2000 IEEE International Electron Devices Meeting ; Conference date: 10-12-2000 Through 13-12-2000",

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T1 - Vth fluctuation induced by statistical variation of pocket dopant profile

AU - Tanaka, T.

AU - Usuki, T.

AU - Futatsugi, T.

AU - Momiyama, Y.

AU - Sugii, T.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - The effect of pocket (halo) profile on the Vth fluctuation due to statistical dopant variation by measurement and simulation was studied. The pocket profile increased the Vth symmetry along with a pocket dose. Vth fluctuaion was enhanced by a factor of greater than 15% due to the pocket profiles. This was attributed to the shrinkage of the area by the pocket dopants.

AB - The effect of pocket (halo) profile on the Vth fluctuation due to statistical dopant variation by measurement and simulation was studied. The pocket profile increased the Vth symmetry along with a pocket dose. Vth fluctuaion was enhanced by a factor of greater than 15% due to the pocket profiles. This was attributed to the shrinkage of the area by the pocket dopants.

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M3 - Conference article

AN - SCOPUS:0034454728

SP - 271

EP - 274

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

T2 - 2000 IEEE International Electron Devices Meeting

Y2 - 10 December 2000 through 13 December 2000

ER -