Vth fluctuation induced by statistical variation of pocket dopant profile

T. Tanaka, T. Usuki, T. Futatsugi, Y. Momiyama, T. Sugii

Research output: Contribution to journalConference articlepeer-review

44 Citations (Scopus)

Abstract

The effect of pocket (halo) profile on the Vth fluctuation due to statistical dopant variation by measurement and simulation was studied. The pocket profile increased the Vth symmetry along with a pocket dose. Vth fluctuaion was enhanced by a factor of greater than 15% due to the pocket profiles. This was attributed to the shrinkage of the area by the pocket dopants.

Original languageEnglish
Pages (from-to)271-274
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2000 Dec 1
Externally publishedYes
Event2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States
Duration: 2000 Dec 102000 Dec 13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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