Abstract
The effect of pocket (halo) profile on the Vth fluctuation due to statistical dopant variation by measurement and simulation was studied. The pocket profile increased the Vth symmetry along with a pocket dose. Vth fluctuaion was enhanced by a factor of greater than 15% due to the pocket profiles. This was attributed to the shrinkage of the area by the pocket dopants.
Original language | English |
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Pages (from-to) | 271-274 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting |
Publication status | Published - 2000 Dec 1 |
Externally published | Yes |
Event | 2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States Duration: 2000 Dec 10 → 2000 Dec 13 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry