Voltage-Controlled Magnonic Spin Tunneling Junction

Kohei Ohgane, Yuta Yahagi, Daisuke Miura, Akimasa Sakuma

Research output: Contribution to journalArticlepeer-review


We theoretically investigate the effective exchange interaction, Jeff, mediated by conductive electrons within a nonmagnetic metal spacer, in the presence of a bias voltage, sandwiched by two ferromagnetic insulators. On the basis of the tight-binding model, we show the voltage and spacer thickness dependences of Jeff, and its contorollability is demonstrated. We also propose a new magnonic device with the functions of both field effect transistor and nonvolatile memory.

Original languageEnglish
JournalUnknown Journal
Publication statusPublished - 2019 Oct 25

ASJC Scopus subject areas

  • General

Fingerprint Dive into the research topics of 'Voltage-Controlled Magnonic Spin Tunneling Junction'. Together they form a unique fingerprint.

Cite this