Voltage-controlled magnonic spin tunneling junction

Kohei Ohgane, Yuta Yahagi, Daisuke Miura, Akimasa Sakuma

Research output: Contribution to journalArticlepeer-review


We theoretically investigate the effective exchange interaction, Jeff, mediated by conductive electrons within a nonmagnetic metal spacer, in the presence of a bias voltage, sandwiched by two ferromagnetic insulators. On the basis of the tight-binding model, we show the voltage and spacer thickness dependences of Jeff, and its contorollability is demonstrated. We also propose a new magnonic device with the functions of both field effect transistor and non-volatile memory.

Original languageEnglish
Article number013601
Journaljournal of the physical society of japan
Issue number1
Publication statusPublished - 2020

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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