Voltage-controlled magnetic anisotropy in an ultrathin Ir-doped Fe layer with a CoFe termination layer

Takayuki Nozaki, Masaki Endo, Masahito Tsujikawa, Tatsuya Yamamoto, Tomohiro Nozaki, Makoto Konoto, Hiroyuki Ohmori, Yutaka Higo, Hitoshi Kubota, Akio Fukushima, Masanori Hosomi, Masafumi Shirai, Yoshishige Suzuki, Shinji Yuasa

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Abstract

We investigated the voltage-controlled magnetic anisotropy (VCMA) in an ultrathin Ir-doped Fe layer with a CoxFe1-x termination layer. The VCMA effect depends on the concentration of the CoxFe1-x alloy, and a large VCMA coefficient, as high as -350 fJ/Vm, was obtained with a Co-rich termination layer. First principles calculations revealed that the increased VCMA effect is due not only to the added Co atoms but also to the Fe and Ir atoms adjacent to the Co atoms. Interface engineering using CoFe termination is also effective for recovering the tunneling magnetoresistance while maintaining a high VCMA effect. The developed structure is applicable for voltage-controlled magnetoresistive devices.

Original languageEnglish
Article number011108
JournalAPL Materials
Volume8
Issue number1
DOIs
Publication statusPublished - 2020 Jan 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

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    Nozaki, T., Endo, M., Tsujikawa, M., Yamamoto, T., Nozaki, T., Konoto, M., Ohmori, H., Higo, Y., Kubota, H., Fukushima, A., Hosomi, M., Shirai, M., Suzuki, Y., & Yuasa, S. (2020). Voltage-controlled magnetic anisotropy in an ultrathin Ir-doped Fe layer with a CoFe termination layer. APL Materials, 8(1), [011108]. https://doi.org/10.1063/1.5132626