Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density

H. Yoda, N. Shimomura, Y. Ohsawa, S. Shirotori, Y. Kato, T. Inokuchi, Y. Kamiguchi, B. Altansargai, Y. Saito, K. Koi, H. Sugiyama, S. Oikawa, M. Shimizu, M. Ishikawa, K. Ikegami, A. Kurobe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

We propose a new spintronics-based memory employing the voltage-control-magnetic-anisotropy effect as a bit selecting principle and the spin-orbit-torque effect as a writing principle. We have fabricated the prototype structure, and successfully demonstrated the writing scheme specific to this memory architecture.

Original languageEnglish
Title of host publication2016 IEEE International Electron Devices Meeting, IEDM 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages27.6.1-27.6.4
ISBN (Electronic)9781509039012
DOIs
Publication statusPublished - 2017 Jan 31
Externally publishedYes
Event62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
Duration: 2016 Dec 32016 Dec 7

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other62nd IEEE International Electron Devices Meeting, IEDM 2016
CountryUnited States
CitySan Francisco
Period16/12/316/12/7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Yoda, H., Shimomura, N., Ohsawa, Y., Shirotori, S., Kato, Y., Inokuchi, T., Kamiguchi, Y., Altansargai, B., Saito, Y., Koi, K., Sugiyama, H., Oikawa, S., Shimizu, M., Ishikawa, M., Ikegami, K., & Kurobe, A. (2017). Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 27.6.1-27.6.4). [7838495] (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838495