Voltage control of a magnetic switching field for magnetic tunnel junctions with low resistance and perpendicular magnetic anisotropy

N. Tezuka, S. Oikawa, M. Matsuura, S. Sugimoto, K. Nishimura, T. Irisawa, Y. Nagamine, K. Tsunekawa

Research output: Contribution to journalArticle

Abstract

The authors investigated the voltage control of a magnetic anisotropy field for perpendicular-magnetic tunnel junctions (p-MTJs) with low and high resistance-area (RA) products and for synthetic antiferromagnetic free and pinned layers. It was found that the sample with low RA products was more sensitive to the applied bias voltage than the sample with high RA products. The bias voltage effect was less pronounced for our sample with the synthetic antiferromagnetic layer for high RA products compared to the MTJs with single free and pinned layers.

Original languageEnglish
Article number055922
JournalAIP Advances
Volume8
Issue number5
DOIs
Publication statusPublished - 2018 May 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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