Void Formation in Phosphosilicate Glass Film with Heat-Treatment in H2 Atmosphere

Hideaki Takeuchi, Junichi Murota

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


The void formation process and phosphorus behavior in phosphosilicate glass film deposited by chemical vapor deposition techniques were investigated. The films were heat-treated three times, first in N2 atmosphere for densification, then in H2or N2 atmosphere, and after that in N2 atmosphere. It was found that (i) void formation takes place with the third heat-treatment in N2 atmosphere, (ii) with the second heat-treatment in H2 atmosphere, absorbance of P=O band at 1330 cm-1 decreases and absorbance of band at 1250 cm-1 increases, but further absorbance change does not take place with the third heat-treatment. The gain in absorbance of the band at 1250 cm-1 is proportional to the loss in absorbance of the P=O band at 1330 cm-1. The quantity of phosphorus products formed with heat-treatment in H2 atmosphere was estimated from the absorbance change of the P=O band at 1330 cm-1. Comparing the quantity of the phosphorus products with the void size and number, it was proposed that the phosphorus products are gaseous species at high temperature, and the quantity of the gaseous species determines the product of the void number in the PSG film and square of the void size.

Original languageEnglish
Pages (from-to)403-407
Number of pages5
JournalJournal of the Electrochemical Society
Issue number2
Publication statusPublished - 1984 Feb
Externally publishedYes


  • O band absorbance
  • void formation phosphosilicate glass. chemical vapor deposition P=

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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