Void formation by thermal stress concentration at twin interfaces in Cu thin films

A. Sekiguchi, J. Koike, S. Kamiya, M. Saka, K. Maruyama

Research output: Contribution to journalArticlepeer-review

69 Citations (Scopus)

Abstract

A void formation mechanism was investigated in an electroplated copper thin film on Ta/SiO2/Si. Microstructural observation after thermal cycling indicated that void formation occurred at intersecting points or terminating corners of annealing twins. The calculated stress distribution was compared with experimental results of the void formation tendency. An excellent correlation was found between void formation sites and stress concentration sites. Electron diffraction analysis revealed that most twin interfaces in Cu thin films are incoherent {322} planes. The stress concentration drives diffusion along incoherent twin interfaces of {322} and leads to void formation at twin interfaces and corners.

Original languageEnglish
Pages (from-to)1264-1266
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number9
DOIs
Publication statusPublished - 2001 Aug 27

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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