Visualization using the scanning nonlinear dielectric microscopy of electrons and holes localized in the thin gate film of metal-oxide-nitride- oxide-semiconductor type flash memory

Koichiro Honda, Yasuo Cho

Research output: Contribution to conferencePaperpeer-review

3 Citations (Scopus)

Abstract

By applying Scanning Nonlinear Dielectric Microscopy (SNDM), we identified the position of electrons/holes existing in the gate SiO2-Si 3N4-SiO2 (ONO) film of the Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) type flash memory. The electrons were detected in the Si3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film. Additionally, we succeeded in detecting the electrons existed in the poly-Si layer of the floating gate of flash memory.

Original languageEnglish
Pages4-11
Number of pages8
Publication statusPublished - 2006 Dec 1
Event7th Annual Non-Volatile Memory Technology Symposium, NVMTS 2006 - San Mateo, CA, United States
Duration: 2006 Nov 52006 Nov 8

Other

Other7th Annual Non-Volatile Memory Technology Symposium, NVMTS 2006
CountryUnited States
CitySan Mateo, CA
Period06/11/506/11/8

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Visualization using the scanning nonlinear dielectric microscopy of electrons and holes localized in the thin gate film of metal-oxide-nitride- oxide-semiconductor type flash memory'. Together they form a unique fingerprint.

Cite this