Visualization using the scanning nonlinear dielectric microscopy of electrons and holes localized in the thin gate film of metal-oxide-nitride- oxide-semiconductor type flash memory

Koichiro Honda; Yasuo Cho

Visualization using the scanning nonlinear dielectric microscopy of electrons and holes localized in the thin gate film of metal-oxide-nitride- oxide-semiconductor type flash memory

Koichiro Honda, Yasuo Cho

Information Devices Division

Research output: Contribution to conference › Paper › peer-review

3 Citations (Scopus)

Abstract

By applying Scanning Nonlinear Dielectric Microscopy (SNDM), we identified the position of electrons/holes existing in the gate SiO₂-Si ₃N₄-SiO₂ (ONO) film of the Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) type flash memory. The electrons were detected in the Si₃N₄ part of the ONO film. The holes, on the other hand, were found in the Si₃N₄ film as well as in the bottom SiO₂ film. Additionally, we succeeded in detecting the electrons existed in the poly-Si layer of the floating gate of flash memory.

Original language	English
Pages	4-11
Number of pages	8
Publication status	Published - 2006 Dec 1
Event	7th Annual Non-Volatile Memory Technology Symposium, NVMTS 2006 - San Mateo, CA, United States Duration: 2006 Nov 5 → 2006 Nov 8

Other

Other	7th Annual Non-Volatile Memory Technology Symposium, NVMTS 2006
Country	United States
City	San Mateo, CA
Period	06/11/5 → 06/11/8

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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Visualization using the scanning nonlinear dielectric microscopy of electrons and holes localized in the thin gate film of metal-oxide-nitride- oxide-semiconductor type flash memory. / Honda, Koichiro; Cho, Yasuo.

2006. 4-11 Paper presented at 7th Annual Non-Volatile Memory Technology Symposium, NVMTS 2006, San Mateo, CA, United States.

Research output: Contribution to conference › Paper › peer-review

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title = "Visualization using the scanning nonlinear dielectric microscopy of electrons and holes localized in the thin gate film of metal-oxide-nitride- oxide-semiconductor type flash memory",

abstract = "By applying Scanning Nonlinear Dielectric Microscopy (SNDM), we identified the position of electrons/holes existing in the gate SiO2-Si 3N4-SiO2 (ONO) film of the Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) type flash memory. The electrons were detected in the Si3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film. Additionally, we succeeded in detecting the electrons existed in the poly-Si layer of the floating gate of flash memory.",

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AU - Cho, Yasuo

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N2 - By applying Scanning Nonlinear Dielectric Microscopy (SNDM), we identified the position of electrons/holes existing in the gate SiO2-Si 3N4-SiO2 (ONO) film of the Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) type flash memory. The electrons were detected in the Si3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film. Additionally, we succeeded in detecting the electrons existed in the poly-Si layer of the floating gate of flash memory.

AB - By applying Scanning Nonlinear Dielectric Microscopy (SNDM), we identified the position of electrons/holes existing in the gate SiO2-Si 3N4-SiO2 (ONO) film of the Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) type flash memory. The electrons were detected in the Si3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film. Additionally, we succeeded in detecting the electrons existed in the poly-Si layer of the floating gate of flash memory.

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