Abstract
By applying Scanning Nonlinear Dielectric Microscopy (SNDM), we identified the position of electrons/holes existing in the gate SiO2-Si 3N4-SiO2 (ONO) film of the Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) type flash memory. The electrons were detected in the Si3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film. Additionally, we succeeded in detecting the electrons existed in the poly-Si layer of the floating gate of flash memory.
Original language | English |
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Pages | 4-11 |
Number of pages | 8 |
Publication status | Published - 2006 Dec 1 |
Event | 7th Annual Non-Volatile Memory Technology Symposium, NVMTS 2006 - San Mateo, CA, United States Duration: 2006 Nov 5 → 2006 Nov 8 |
Other
Other | 7th Annual Non-Volatile Memory Technology Symposium, NVMTS 2006 |
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Country/Territory | United States |
City | San Mateo, CA |
Period | 06/11/5 → 06/11/8 |
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering