Visualization of single atomic steps on an ultra-flat Si(100) surface by advanced differential interference contrast microscopy

Shin Ichiro Kobayashi, Youn Geun Kim, Rui Wen, Kohei Yasuda, Hirokazu Fukidome, Tomoyuki Suwa, Rihito Kuroda, Xiang Li, Akinobu Teramoto, Tadahiro Ohmi, Kingo Itaya

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

It is revealed for the first time that single atomic steps with a height of 0.14 nm on a Si(100) surface in air can be clearly distinguished by using a laser confocal microscope combined with an advanced differential interference contrast microscope (LCM-DIM). Images of LCM-DIM were acquired in wider areas than 100 m2 within a shorter period of time than a few second. Furthermore, even in electrolyte solutions, the single atomic step can be seen by the new technique, which will be able to apply to the evaluation of dynamic processes of chemical and electrochemical etching of Si surfaces.

Original languageEnglish
Pages (from-to)H351-H353
JournalElectrochemical and Solid-State Letters
Volume14
Issue number9
DOIs
Publication statusPublished - 2011

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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