TY - GEN
T1 - Visualization of polarization and two dimensional electron gas distribution in AlGaN/GaN heterostructure using scanning nonlinear dielectric microscopy
AU - Hirose, Kotaro
AU - Chinone, Norimichi
AU - Cho, Yasuo
N1 - Funding Information:
We would like to express my gratitude to Y. Goto of Toyota Motor Co., Ltd. for their support. This work was supported by Grant-in-Aid for Scientific Research S (23226008) from the Japan Society for the Promotion of Science.
Publisher Copyright:
© 2016 Trans Tech Publications, Switzerland.
PY - 2016
Y1 - 2016
N2 - AlGaN/GaN heterostructure was observed using scanning nonlinear dielectric microscopy, which can measure both carrier and polarization profile in AlGaN/GaN heterostructure. As a result, GaN spontaneous polarization and AlGaN polarization which was sum of spontaneous polarization and piezoelectric polarization were clearly distinguished. Moreover, two dimensional electron gas was observed at the AlGaN/GaN interface. These results show that scanning nonlinear dielectric microscopy is useful method for evaluation of two dimensional electron gas profile and polarization profile in AlGaN/GaN heterostructure.
AB - AlGaN/GaN heterostructure was observed using scanning nonlinear dielectric microscopy, which can measure both carrier and polarization profile in AlGaN/GaN heterostructure. As a result, GaN spontaneous polarization and AlGaN polarization which was sum of spontaneous polarization and piezoelectric polarization were clearly distinguished. Moreover, two dimensional electron gas was observed at the AlGaN/GaN interface. These results show that scanning nonlinear dielectric microscopy is useful method for evaluation of two dimensional electron gas profile and polarization profile in AlGaN/GaN heterostructure.
KW - 2D electron gas
KW - AlGaN/GaN heterostructure
KW - Scanning nonlinear dielectric microscopy
UR - http://www.scopus.com/inward/record.url?scp=84971574740&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84971574740&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.858.1182
DO - 10.4028/www.scientific.net/MSF.858.1182
M3 - Conference contribution
AN - SCOPUS:84971574740
SN - 9783035710427
T3 - Materials Science Forum
SP - 1182
EP - 1185
BT - Silicon Carbide and Related Materials 2015
A2 - Roccaforte, Fabrizio
A2 - Giannazzo, Filippo
A2 - La Via, Francesco
A2 - Nipoti, Roberta
A2 - Crippa, Danilo
A2 - Saggio, Mario
PB - Trans Tech Publications Ltd
T2 - 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
Y2 - 4 October 2015 through 9 October 2015
ER -