TY - JOUR
T1 - Visualization of Gate-Bias-Induced Carrier Redistribution in SiC Power DIMOSFET Using Scanning Nonlinear Dielectric Microscopy
AU - Chinone, Norimichi
AU - Cho, Yasuo
N1 - Funding Information:
This work was supported in part by the Japan Society for the Promotion of Science (JSPS) through the Grant-in-Aid for Scientific Research S under Grant 23226008, in part by the JSPS through the Grant-in-Aid for Scientific Research A under Grant H1602330, and in part by JSPS for Young Scientists under Grant 268084.
Publisher Copyright:
© 1963-2012 IEEE.
Copyright:
Copyright 2016 Elsevier B.V., All rights reserved.
PY - 2016
Y1 - 2016
N2 - Carrier profiling in the cross section of a gate-biased silicon carbide power double-implanted MOSFET is demonstrated with a newly developed measurement system that utilizes super-higher-order scanning nonlinear dielectric microscopy. Two techniques that have features that complement each other were proposed and demonstrated. In all measurements, the tip-sample voltage difference was cancelled during gate-source voltage (VGS) application. Variation in the VGS-dependent carrier distribution was reasonably determined using both of the proposed techniques.
AB - Carrier profiling in the cross section of a gate-biased silicon carbide power double-implanted MOSFET is demonstrated with a newly developed measurement system that utilizes super-higher-order scanning nonlinear dielectric microscopy. Two techniques that have features that complement each other were proposed and demonstrated. In all measurements, the tip-sample voltage difference was cancelled during gate-source voltage (VGS) application. Variation in the VGS-dependent carrier distribution was reasonably determined using both of the proposed techniques.
KW - Carrier profiling
KW - scanning nonlinear dielectric microscopy (SNDM)
KW - semiconductor device measurements
KW - silicon carbide (SiC) devices
KW - super-higher-order (SHO) SNDM
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U2 - 10.1109/TED.2016.2571780
DO - 10.1109/TED.2016.2571780
M3 - Article
AN - SCOPUS:84973542349
VL - 63
SP - 3165
EP - 3170
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 8
M1 - 7486071
ER -