Visualization of electrons localized in metal-oxide-nitride-oxide- semiconductor flash memory thin gate films by detecting high-order nonlinear permittivity using scanning nonlinear dielectric microscopy

Koichiro Honda, Yasuo Cho

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Charge accumulation in semiconductor devices was investigated by using scanning nonlinear dielectric microscopy (SNDM) to detect a high-order nonlinear permittivity (ε3333). This higher-order SNDM has a much higher resolution than conventional SNDM that is used to measure the lowestorder nonlinear permittivity (ε333). It enabled us to visualize highly resolved charge patterns stored in SiO 2-SiN-SiO 2 (ONO) films of downsized metal-ONO-semiconductor (MONOS) flash memory with a high contrast. ε3333 images of the stored electron distributions in ONO films of n-MONOS exhibited the highest contrast reported by detecting ε333.

Original languageEnglish
Article number036602
JournalApplied Physics Express
Volume5
Issue number3
DOIs
Publication statusPublished - 2012 Mar 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Visualization of electrons localized in metal-oxide-nitride-oxide- semiconductor flash memory thin gate films by detecting high-order nonlinear permittivity using scanning nonlinear dielectric microscopy'. Together they form a unique fingerprint.

  • Cite this