Visualization of electrons and holes localized in the thin gate film of metal-oxide-nitride-oxide-semiconductor type Flash memory by scanning nonlinear dielectric microscopy

Koichiro Honda, Sunao Hashimoto, Yasuo Cho

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

By applying scanning nonlinear dielectric microscopy (SNDM), we identified the position of electrons/holes existing in the gate SiO2-Si 3N4-SiO2 (ONO) film of the metal-oxide-nitride- oxide-semiconductor (MONOS) type Flash memory. The electrons were detected in the Si3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film.

Original languageEnglish
Pages (from-to)S90-S93
JournalNanotechnology
Volume16
Issue number3
DOIs
Publication statusPublished - 2005 Mar 1

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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