By applying scanning nonlinear dielectric microscopy (SNDM), we identified the position of electrons/holes existing in the gate SiO2-Si 3N4-SiO2 (ONO) film of the metal-oxide-nitride- oxide-semiconductor (MONOS) type Flash memory. The electrons were detected in the Si3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film.
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering