Abstract
We used scanning nonlinear dielectric microscopy to observe the position of electrons and holes in the gate SiO2-Si3N 4SiO2 (ONO) film of metal-oxide-nitride-oxide semiconductor type Flash memory. The electrons were detected in the Si 3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film.
Original language | English |
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Pages (from-to) | 21-26 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 803 |
DOIs | |
Publication status | Published - 2003 |
Event | Advanced data Storage Materials and Characterization Techniques - Boston, MA, United States Duration: 2003 Dec 1 → 2004 Dec 4 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering