Visualization of electrons and holes localized in the gate thin film of metal-oxide nitride-oxide semiconductor type flash memory by using scanning nonlinear dielectric microscopy

Koichiro Honda, Yasuo Cho

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

We used scanning nonlinear dielectric microscopy to observe the position of electrons and holes in the gate SiO2-Si3N 4SiO2 (ONO) film of metal-oxide-nitride-oxide semiconductor type Flash memory. The electrons were detected in the Si 3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film.

Original languageEnglish
Pages (from-to)21-26
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume803
DOIs
Publication statusPublished - 2003
EventAdvanced data Storage Materials and Characterization Techniques - Boston, MA, United States
Duration: 2003 Dec 12004 Dec 4

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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