Visualization of electrons and holes localized in the gate thin film of metal-oxide nitride-oxide semiconductor type flash memory by using scanning nonlinear dielectric microscopy

Koichiro Honda; Yasuo Cho

doi:10.1557/proc-803-gg4.2

Visualization of electrons and holes localized in the gate thin film of metal-oxide nitride-oxide semiconductor type flash memory by using scanning nonlinear dielectric microscopy

Koichiro Honda, Yasuo Cho

Information Devices Division

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We used scanning nonlinear dielectric microscopy to observe the position of electrons and holes in the gate SiO₂-Si₃N ₄SiO₂ (ONO) film of metal-oxide-nitride-oxide semiconductor type Flash memory. The electrons were detected in the Si ₃N₄ part of the ONO film. The holes, on the other hand, were found in the Si₃N₄ film as well as in the bottom SiO₂ film.

Original language	English
Pages (from-to)	21-26
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	803
DOIs	https://doi.org/10.1557/proc-803-gg4.2
Publication status	Published - 2003
Event	Advanced data Storage Materials and Characterization Techniques - Boston, MA, United States Duration: 2003 Dec 1 → 2004 Dec 4

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-803-gg4.2

Cite this

Visualization of electrons and holes localized in the gate thin film of metal-oxide nitride-oxide semiconductor type flash memory by using scanning nonlinear dielectric microscopy. / Honda, Koichiro; Cho, Yasuo.

In: Materials Research Society Symposium - Proceedings, Vol. 803, 2003, p. 21-26.

Research output: Contribution to journal › Conference article › peer-review

@article{365cfb3758b940829f54cfd1eab28356,

title = "Visualization of electrons and holes localized in the gate thin film of metal-oxide nitride-oxide semiconductor type flash memory by using scanning nonlinear dielectric microscopy",

abstract = "We used scanning nonlinear dielectric microscopy to observe the position of electrons and holes in the gate SiO2-Si3N 4SiO2 (ONO) film of metal-oxide-nitride-oxide semiconductor type Flash memory. The electrons were detected in the Si 3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film.",

author = "Koichiro Honda and Yasuo Cho",

year = "2003",

doi = "10.1557/proc-803-gg4.2",

language = "English",

volume = "803",

pages = "21--26",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Advanced data Storage Materials and Characterization Techniques ; Conference date: 01-12-2003 Through 04-12-2004",

}

TY - JOUR

T1 - Visualization of electrons and holes localized in the gate thin film of metal-oxide nitride-oxide semiconductor type flash memory by using scanning nonlinear dielectric microscopy

AU - Honda, Koichiro

AU - Cho, Yasuo

PY - 2003

Y1 - 2003

N2 - We used scanning nonlinear dielectric microscopy to observe the position of electrons and holes in the gate SiO2-Si3N 4SiO2 (ONO) film of metal-oxide-nitride-oxide semiconductor type Flash memory. The electrons were detected in the Si 3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film.

AB - We used scanning nonlinear dielectric microscopy to observe the position of electrons and holes in the gate SiO2-Si3N 4SiO2 (ONO) film of metal-oxide-nitride-oxide semiconductor type Flash memory. The electrons were detected in the Si 3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film.

UR - http://www.scopus.com/inward/record.url?scp=2942689615&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2942689615&partnerID=8YFLogxK

U2 - 10.1557/proc-803-gg4.2

DO - 10.1557/proc-803-gg4.2

M3 - Conference article

AN - SCOPUS:2942689615

VL - 803

SP - 21

EP - 26

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - Advanced data Storage Materials and Characterization Techniques

Y2 - 1 December 2003 through 4 December 2004

ER -

Visualization of electrons and holes localized in the gate thin film of metal-oxide nitride-oxide semiconductor type flash memory by using scanning nonlinear dielectric microscopy

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this