Visualization of charges stored in the floating gate of flash memory by scanning nonlinear dielectric microscopy

Koichiro Honda, Sunao Hashimoto, Yasuo Cho

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

By applying scanning nonlinear dielectric microscopy (SNDM), we succeeded in clarifying that electrons existed in the poly-Si layer of the floating gate of a flash memory. The charge accumulated in the floating gate can be detected by SNDM as a change in the capacitance of the poly-Si (floating gate) by scanning the surface of the SiO2-SiN4-SiO2 (ONO) film covering the floating gate. There was a clear black contrast region in the SNDM image of the floating gate area, where electrons were injected. However, no clear contrast appeared in the floating gate where electrons were not injected. We confirmed that SNDM is one of the most useful methods of observing the charge accumulated in flash memory.

Original languageEnglish
JournalNanotechnology
Volume17
Issue number7
DOIs
Publication statusPublished - 2006 Apr 14

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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