Visual understanding of the hidden-order transition in URu2 Si2 by high-resolution x-ray Compton scattering

Akihisa Koizumi, Yasunori Kubo, Gaku Motoyama, Tomoo Yamamura, Masayoshi Itou, Yoshiharu Sakurai

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report the change of electronic structure associated with the hidden-order (HO) transition in URu2Si2 through Compton scattering experiment on the (001) plane of the single crystal. The two-dimensional electron occupation number densities (EONDs) obtained at 14 and 20 K, which are the projection of Fermi volume onto the kx-ky plane of the first Brillouin zone, clearly reflect a whole image of electronic structure in the HO and paramagnetic (PM) phases, respectively. The change in electronic structure is well described by theoretical EONDs derived from the result of a band calculation, where U5f electrons are treated as itinerant ones. We also evaluate the electron (hole) numbers in the HO and PM phases and, therefore, its change on the HO transition. The HO transition is deeply involved with a significant change in 5f electrons from partially localized to itinerant states through hybridization with conduction electrons, resulting in the reconstruction of Fermi-surface structure.

Original languageEnglish
Article number125112
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume92
Issue number12
DOIs
Publication statusPublished - 2015 Sep 8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Visual understanding of the hidden-order transition in URu<sub>2</sub> Si<sub>2</sub> by high-resolution x-ray Compton scattering'. Together they form a unique fingerprint.

  • Cite this