Visible photoluminescence from InGaPN/GaP lattice-matched single quantum well structures grown by MOVPE

D. Kaewket, S. Tungasmita, S. Sanorpim, R. Katayama, K. Onabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Optical properties of InxGa1-xP1-xN ylatticematched single quantum wells(SQWs) withdifferent well widths (Lz = 1.6 - 6.4 nm) at different In (x = 0.050 - 0.135) and N (y = 0.025 - 0.071) concentrations have been investigated by lowtemperature photoluminescence (PL) and PL-excitation (PLE). The PL spectra showed the strong visible emission from the samples which attracted to a variety of optoelectronic device applications such as light emitting and laser diodes. Comparing to the bulk film, the PL peak position and the fundamental absorption edge of PLE spectra exhibit blue-shift, which correspond to the principally determined by the quantum confinement effect to the well. Comparison between the absorption edge of PLE spectra and the finite square well calculation demonstrate that the effective bandgap energy of InGaPN/GaP system is might be originated from the N-related localized states. With increasing N concentration, the PL peak position exhibits red-shift, which is due to the lowering conduction band edge of InGaPN. On the other hand, the integrated PL intensity is significantly decreased for the SQW with higher In and N concentrations. This probably caused by the larger number of non-radiative process which associated to N-induced trap states.

Original languageEnglish
Title of host publicationProceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007
Pages695-700
Number of pages6
DOIs
Publication statusPublished - 2007 Aug 28
Event2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007 - Bangkok, Thailand
Duration: 2007 Jan 162007 Jan 19

Publication series

NameProceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007

Other

Other2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007
CountryThailand
CityBangkok
Period07/1/1607/1/19

Keywords

  • InGaPN
  • Metalorganic vapor phase epitaxy (MOVPE)
  • Photoluminescence (PL)
  • Photoluminescenceexcitation (PLE)
  • Single quantum wells (SQWs)

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Computer Science Applications
  • Electrical and Electronic Engineering

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  • Cite this

    Kaewket, D., Tungasmita, S., Sanorpim, S., Katayama, R., & Onabe, K. (2007). Visible photoluminescence from InGaPN/GaP lattice-matched single quantum well structures grown by MOVPE. In Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007 (pp. 695-700). [4160417] (Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007). https://doi.org/10.1109/NEMS.2007.352114