Visible luminescence of nanocrystalline AlN:Er thin film by co-deposition of AlN, Er, and SiO2

J. W. Lim, W. Takayama, Y. F. Zhu, J. W. Bae, J. F. Wang, S. Y. Ji, K. Mimura, J. H. Yoo, M. Isshiki

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We report a visible luminescence of Er3+ ions in an amorphous-nanocrystalline AlN:Er thin film prepared by co-deposition using AlN, Er, and SiO2 targets. A PL emission spectrum of Er3+ in the AlN:Er film annealed at 750 °C showed a strong bluish green emission of Er3+ in the amorphous-nanocrystalline AlN:Er thin film, which is attributed to the intra-4fEr3+ transitions of 2H11/2 4I15/2 and 4F7/2 4I15/2. It was found that crystallite diameters were between 3 and 5 nm by high-resolution transmission electron microscopy. The occurrence of the strong Er3+ emission in the annealed AlN:Er thin film with a mixture of amorphous and nanocrystalline phases may be contributed to an increase in the number of excitation Er3+ centers and a presence of oxygen related to Er3+ excitation and recombination process in the AlN:Er thin film.

Original languageEnglish
Pages (from-to)236-239
Number of pages4
JournalCurrent Applied Physics
Volume7
Issue number3
DOIs
Publication statusPublished - 2007 Mar 1

Keywords

  • Aluminium nitride
  • Deposition
  • Erbium
  • Luminescence
  • Thin film

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Visible luminescence of nanocrystalline AlN:Er thin film by co-deposition of AlN, Er, and SiO<sub>2</sub>'. Together they form a unique fingerprint.

Cite this