Visible light emission from porous Si investigated with In-situ photoluminescence, Raman, and IR spectroscopies

Toshimasa Wadayama, Tuyoshi Arigane, Aritada Hatta

Research output: Contribution to journalArticle

Abstract

Visible light emission from porous silicon (PS) has been investigated in-situ with photoluminescence (PL), Raman, and transmission IR spectroscopies in an ultra-high vacuum. The PL intensity of as-anodized PS was significantly decreased by the first exposure to thermoelectrons accompanied by the intensity reduction of the IR absorption bands due to hydrogenated Si species (Si-H x; x=1-3). Upon subsequent exposure to H atoms the lost PL intensity was almost recovered but never exceeded its original intensity. This PL recovery was accompanied by regeneration of the Si-Hx bonds. In contrast, an exceeding recovery was observed for the thermoelectron-treated PS after exposure to H2O or O3. Simultaneous IR measurements revealed that Si-OH or Si-O bonds were formed at the PS surface. These results demonstrate that the PL of the PS is closely related to the oxygen-included surface chemical bonds.

Original languageEnglish
Pages (from-to)873-879
Number of pages7
JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Volume68
Issue number10
DOIs
Publication statusPublished - 2004 Oct

Keywords

  • Infrared absorption spectroscopy
  • Photoluminescence
  • Porous silicon
  • Raman spectroscopy
  • Thermoelectron

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Visible light emission from porous Si investigated with In-situ photoluminescence, Raman, and IR spectroscopies'. Together they form a unique fingerprint.

Cite this