TY - JOUR
T1 - Viscosity of molten silicon and the factors affecting measurement
AU - Sato, Yuzuru
AU - Kameda, Yuichi
AU - Nagasawa, Toru
AU - Sakamoto, Takashi
AU - Moriguchi, Shinpei
AU - Yamamura, Tsutomu
AU - Waseda, Yoshio
N1 - Funding Information:
This work is the results of “Technology for Production of High Quality Crystal” which is supported by the New Energy and Industrial Technology Development Organization (NEDO) through the Japan Space Utilization Promotion Center (JSUP) in the program of the Ministry of Economy, Trade and Industry (METI). The authors also thank SUMITOMO SITIX Co. who kindly supplied the single crystal of semiconductor silicon.
PY - 2003/3
Y1 - 2003/3
N2 - Viscosity of molten silicon has been measured to study the behavior, especially around the melting point, in order to supply useful information for the crystal growth of semiconductors. The temperature range was taken as wide as possible from 1891 K down to the supercooled region by using an oscillating viscometer with various materials of crucible to study the effect of the materials. It has been clear that the viscosity of molten silicon showed a good Arrhenian behavior in the entire temperature range including the supercooled region and no abnormal increase around the melting point. The viscosity values were lower than the reported values and the maximum difference reached 50% even in the temperatures sufficiently higher than the melting point. Furthermore, almost no effect on the measurement by the materials of crucible was found. The recommended viscosity is presented by the following equation based on the present results: log η/mPa s = -0.727 + 819/T, Eη = 15.7 kJ mol-1. The viscosity and the activation energy were considerably lower than those of other metals with high melting points and the reason was considered to be due to the looser structure of the molten silicon originated from diamond-type solid structure.
AB - Viscosity of molten silicon has been measured to study the behavior, especially around the melting point, in order to supply useful information for the crystal growth of semiconductors. The temperature range was taken as wide as possible from 1891 K down to the supercooled region by using an oscillating viscometer with various materials of crucible to study the effect of the materials. It has been clear that the viscosity of molten silicon showed a good Arrhenian behavior in the entire temperature range including the supercooled region and no abnormal increase around the melting point. The viscosity values were lower than the reported values and the maximum difference reached 50% even in the temperatures sufficiently higher than the melting point. Furthermore, almost no effect on the measurement by the materials of crucible was found. The recommended viscosity is presented by the following equation based on the present results: log η/mPa s = -0.727 + 819/T, Eη = 15.7 kJ mol-1. The viscosity and the activation energy were considerably lower than those of other metals with high melting points and the reason was considered to be due to the looser structure of the molten silicon originated from diamond-type solid structure.
KW - A1. Viscosity
KW - A2. Growth from melt
KW - B1. Silicon
KW - B2. Semiconducting silicon
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U2 - 10.1016/S0022-0248(02)02153-X
DO - 10.1016/S0022-0248(02)02153-X
M3 - Article
AN - SCOPUS:0037364745
VL - 249
SP - 404
EP - 415
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 3-4
ER -