Abstract
A Si single crystal covered with a thick amorphous layer of SiO2 was heated in vacuum in an electron microscope between 1373 and 1473 K. During the heating the amorphous layer of SiO2 was reduced. It was found that the interface between crystalline Si and SiO2 vibrates during reduction.
| Original language | English |
|---|---|
| Pages (from-to) | 173-179 |
| Number of pages | 7 |
| Journal | Philosophical Magazine Letters |
| Volume | 76 |
| Issue number | 3 |
| Publication status | Published - 1997 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Tsukimoto, S., Sasaki, K., Hirayama, T., & Saka, H. (1997). Vibration of an interface between Si and SiO2 during reduction of SiO2. Philosophical Magazine Letters, 76(3), 173-179.