Vibration of an interface between Si and SiO2 during reduction of SiO2

S. Tsukimoto; K. Sasaki; T. Hirayama; H. Saka

Vibration of an interface between Si and SiO₂ during reduction of SiO₂

S. Tsukimoto, K. Sasaki, T. Hirayama, H. Saka

Research output: Contribution to journal › Article › peer-review

Abstract

A Si single crystal covered with a thick amorphous layer of SiO₂ was heated in vacuum in an electron microscope between 1373 and 1473 K. During the heating the amorphous layer of SiO₂ was reduced. It was found that the interface between crystalline Si and SiO₂ vibrates during reduction.

Original language	English
Pages (from-to)	173-179
Number of pages	7
Journal	Philosophical Magazine Letters
Volume	76
Issue number	3
Publication status	Published - 1997

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Fingerprint Dive into the research topics of 'Vibration of an interface between Si and SiO<sub>2</sub> during reduction of SiO<sub>2</sub>'. Together they form a unique fingerprint.

Cite this

@article{51f1600998904003af51c41642f301d3,

title = "Vibration of an interface between Si and SiO2 during reduction of SiO2",

abstract = "A Si single crystal covered with a thick amorphous layer of SiO2 was heated in vacuum in an electron microscope between 1373 and 1473 K. During the heating the amorphous layer of SiO2 was reduced. It was found that the interface between crystalline Si and SiO2 vibrates during reduction.",

author = "S. Tsukimoto and K. Sasaki and T. Hirayama and H. Saka",

year = "1997",

language = "English",

volume = "76",

pages = "173--179",

journal = "Philosophical Magazine Letters",

issn = "0950-0839",

publisher = "Taylor and Francis Ltd.",

number = "3",

}

TY - JOUR

T1 - Vibration of an interface between Si and SiO2 during reduction of SiO2

AU - Tsukimoto, S.

AU - Sasaki, K.

AU - Hirayama, T.

AU - Saka, H.

PY - 1997

Y1 - 1997

N2 - A Si single crystal covered with a thick amorphous layer of SiO2 was heated in vacuum in an electron microscope between 1373 and 1473 K. During the heating the amorphous layer of SiO2 was reduced. It was found that the interface between crystalline Si and SiO2 vibrates during reduction.

AB - A Si single crystal covered with a thick amorphous layer of SiO2 was heated in vacuum in an electron microscope between 1373 and 1473 K. During the heating the amorphous layer of SiO2 was reduced. It was found that the interface between crystalline Si and SiO2 vibrates during reduction.

UR - http://www.scopus.com/inward/record.url?scp=0031235063&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031235063&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0031235063

VL - 76

SP - 173

EP - 179

JO - Philosophical Magazine Letters

JF - Philosophical Magazine Letters

SN - 0950-0839

IS - 3

ER -