Vibration of an interface between Si and SiO2 during reduction of SiO2

S. Tsukimoto, K. Sasaki, T. Hirayama, H. Saka

    Research output: Contribution to journalArticle

    4 Citations (Scopus)

    Abstract

    A Si single crystal covered with a thick amorphous layer of SiO2 was heated in vacuum in an electron microscope between 1373 and 1473 K. During the heating the amorphous layer of SiO2 was reduced. It was found that the interface between crystalline Si and SiO2 vibrates during reduction.

    Original languageEnglish
    Pages (from-to)173-179
    Number of pages7
    JournalPhilosophical Magazine Letters
    Volume76
    Issue number3
    Publication statusPublished - 1997

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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  • Cite this

    Tsukimoto, S., Sasaki, K., Hirayama, T., & Saka, H. (1997). Vibration of an interface between Si and SiO2 during reduction of SiO2. Philosophical Magazine Letters, 76(3), 173-179.