@article{4d44f96c775b47c0ab58dc68547b0514,
title = "VIB-1 New Hot-Carrier-Induced Degradation Phenomena in Half-Micrometer MOS Transistors",
author = "Akihiro Nitayama and Naoko Takenouchi and Takeshi Hamamoto and Yukihito Oowaki",
year = "1987",
month = nov,
doi = "10.1109/T-ED.1987.23316",
language = "English",
volume = "34",
pages = "2384",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",
}