VIB-1 New Hot-Carrier-Induced Degradation Phenomena in Half-Micrometer MOS Transistors

Akihiro Nitayama, Naoko Takenouchi, Takeshi Hamamoto, Yukihito Oowaki

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)
Original languageEnglish
Pages (from-to)2384
Number of pages1
JournalIEEE Transactions on Electron Devices
Issue number11
Publication statusPublished - 1987 Nov
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this