VIB-1 New Hot-Carrier-Induced Degradation Phenomena in Half-Micrometer MOS Transistors

Akihiro Nitayama, Naoko Takenouchi, Takeshi Hamamoto, Yukihito Oowaki

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Original language	English
Pages (from-to)	2384
Number of pages	1
Journal	IEEE Transactions on Electron Devices
Volume	34
Issue number	11
DOIs	https://doi.org/10.1109/T-ED.1987.23316
Publication status	Published - 1987 Nov

ASJC Scopus subject areas

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AU - Oowaki, Yukihito

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