Via-last/backside-via 3D integration using a visible-light laser debonding technique

T. Fukushima, M. Mariappan, J. C. Bea, H. Hashimoto, Y. Sato, M. Motoyoshi, K. W. Lee, M. Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A visible-light laser debonding technique is introduced for via-last/backside-via 3D integration. Temporary bonding of 12-inch wafers with a temporary glue and the subsequent wafer thinning processes give small TTV within 1 μm by using an auto-TTV functions. Cu-TSV daisy chains with TSV diameters of 5 μm are formed in 50-μm-thick thinned Si wafers.

Original languageEnglish
Title of host publicationProceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
PublisherIEEE Computer Society
Number of pages1
ISBN (Print)9781479952618
DOIs
Publication statusPublished - 2014 Jan 1
Event2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014 - Tokyo, Japan
Duration: 2014 Jul 152014 Jul 16

Publication series

NameProceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014

Other

Other2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
CountryJapan
CityTokyo
Period14/7/1514/7/16

ASJC Scopus subject areas

  • Filtration and Separation

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