Very wide spectrum multiquantum well superluminescent diode at 1·5 μm

S. Kondo, H. Yasaka, Y. Noguchi, K. Magari, M. Sugo, O. Mikami

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)

Abstract

An InGaAs/InGaAsP multiquantum well superluminescent diode (SLD) emitting at l·5 μ m has been studied. Broad spectral widths exceeding 100 nm are achieved under a wide injection current range. The maximum spectral width is 170nm, which gives a calculated coherence length of 13 μ m, approximately one third that of 1·5 μ m conventionally available bulk SLDs.

Original languageEnglish
Pages (from-to)132-133
Number of pages2
JournalElectronics Letters
Volume28
Issue number2
DOIs
Publication statusPublished - 1992 Jan 16
Externally publishedYes

Keywords

  • Diodes
  • Luminescent devices
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Very wide spectrum multiquantum well superluminescent diode at 1·5 μm'. Together they form a unique fingerprint.

Cite this