Very thin oxide film on a silicon surface by ultraclean oxidation

T. Ohmi, M. Morita, Akinobu Teramoto, K. Makihara, K. S. Tseng

Research output: Contribution to journalArticlepeer-review

60 Citations (Scopus)

Abstract

Very thin oxide films with a high electrical insulating performance have been grown by controlling preoxide growth using the ultraclean oxidation method. The current level through the ultraclean oxide is lower than that through the conventional dry oxide including thicker preoxide. The barrier height at the silicon-oxide interface for electrons emission from silicon to oxide for the ultraclean oxide is little decreased as the thickness is thinner, while the barrier height for conventional dry oxide is drastically decreased. The growth rate of ultraclean oxide at 900°C is governed by a simple parabolic law even in the range of 5-20 nm.

Original languageEnglish
Pages (from-to)2126-2128
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number17
DOIs
Publication statusPublished - 1992 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Very thin oxide film on a silicon surface by ultraclean oxidation'. Together they form a unique fingerprint.

Cite this