Very thin oxide film on a silicon surface by ultraclean oxidation

T. Ohmi, M. Morita, A. Teramoto, K. Makihara, K. S. Tseng

Research output: Contribution to journalArticlepeer-review

61 Citations (Scopus)


Very thin oxide films with a high electrical insulating performance have been grown by controlling preoxide growth using the ultraclean oxidation method. The current level through the ultraclean oxide is lower than that through the conventional dry oxide including thicker preoxide. The barrier height at the silicon-oxide interface for electrons emission from silicon to oxide for the ultraclean oxide is little decreased as the thickness is thinner, while the barrier height for conventional dry oxide is drastically decreased. The growth rate of ultraclean oxide at 900°C is governed by a simple parabolic law even in the range of 5-20 nm.

Original languageEnglish
Pages (from-to)2126-2128
Number of pages3
JournalApplied Physics Letters
Issue number17
Publication statusPublished - 1992

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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