A new periodically doped distributed Bragg reflector is examined. This new structure is expected to reduce the electrical resistivity without optical absorption increase. A very low threshold current density of 450 A/cm2 is obtained in vertical-cavity surface-emitting lasers with periodically doped distributed Bragg reflectors.
|Number of pages||3|
|Publication status||Published - 1992 Feb|
- Integrated optics
- Semiconductor lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering