Very low threshold current density in vertical-cavity surface-emitting laser diodes with periodically doped distributed Bragg reflectors

M. Sugimoto; H. Kosaka; K. Kurihara; I. Ogura; T. Numai; K. Kasahara

doi:10.1049/el:19920241

Very low threshold current density in vertical-cavity surface-emitting laser diodes with periodically doped distributed Bragg reflectors

M. Sugimoto, H. Kosaka, K. Kurihara, I. Ogura, T. Numai, K. Kasahara

Research Institute of Electrical Communication (RIEC)

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

A new periodically doped distributed Bragg reflector is examined. This new structure is expected to reduce the electrical resistivity without optical absorption increase. A very low threshold current density of 450 A/cm² is obtained in vertical-cavity surface-emitting lasers with periodically doped distributed Bragg reflectors.

Original language	English
Pages (from-to)	385-387
Number of pages	3
Journal	Electronics Letters
Volume	28
Issue number	4
DOIs	https://doi.org/10.1049/el:19920241
Publication status	Published - 1992 Feb

Keywords

Integrated optics
Lasers
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19920241

Cite this

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title = "Very low threshold current density in vertical-cavity surface-emitting laser diodes with periodically doped distributed Bragg reflectors",

abstract = "A new periodically doped distributed Bragg reflector is examined. This new structure is expected to reduce the electrical resistivity without optical absorption increase. A very low threshold current density of 450 A/cm2 is obtained in vertical-cavity surface-emitting lasers with periodically doped distributed Bragg reflectors.",

keywords = "Integrated optics, Lasers, Semiconductor lasers",

author = "M. Sugimoto and H. Kosaka and K. Kurihara and I. Ogura and T. Numai and K. Kasahara",

year = "1992",

month = feb,

doi = "10.1049/el:19920241",

language = "English",

volume = "28",

pages = "385--387",

journal = "Electronics Letters",

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publisher = "Institution of Engineering and Technology",

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AU - Sugimoto, M.

AU - Kosaka, H.

AU - Kurihara, K.

AU - Ogura, I.

AU - Numai, T.

AU - Kasahara, K.

PY - 1992/2

Y1 - 1992/2

N2 - A new periodically doped distributed Bragg reflector is examined. This new structure is expected to reduce the electrical resistivity without optical absorption increase. A very low threshold current density of 450 A/cm2 is obtained in vertical-cavity surface-emitting lasers with periodically doped distributed Bragg reflectors.

AB - A new periodically doped distributed Bragg reflector is examined. This new structure is expected to reduce the electrical resistivity without optical absorption increase. A very low threshold current density of 450 A/cm2 is obtained in vertical-cavity surface-emitting lasers with periodically doped distributed Bragg reflectors.

KW - Integrated optics

KW - Lasers

KW - Semiconductor lasers

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JO - Electronics Letters

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ER -

Very low threshold current density in vertical-cavity surface-emitting laser diodes with periodically doped distributed Bragg reflectors

Abstract

Keywords

ASJC Scopus subject areas

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