Very low-temperature epitaxial growth of silicon and germanium using plasma-assisted CVD

Masao Sakuraba, Daisuke Muto, Masaki Mori, Katsutoshi Sugawara, Junichi Murota

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

By electron-cyclotron resonance Ar plasma enhanced chemical-vapor deposition, Si and Ge epitaxial growth on Si(100) were achieved without substrate heating using SiH4 and GeH4, respectively, and formation of highly strained nanometer-order heterostructures of Si and Ge was demonstrated. Moreover, on atomic-order nitrided Si(100), Si epitaxial growth without substrate heating was also achieved, and it was confirmed that N atoms of about 0.8 atomic layer are confined within about a 3 nm-thick region under present measurement accuracy. These results open the way to realization of highly strained nanometer-order heterostructures with local doping control.

Original languageEnglish
Pages (from-to)10-13
Number of pages4
JournalThin Solid Films
Volume517
Issue number1
DOIs
Publication statusPublished - 2008 Nov 3

Keywords

  • Atomic layer doping
  • Chemical vapor deposition (CVD)
  • Electron-cyclotron resonance (ECR) plasma
  • Epitaxial growth
  • Ge
  • Heterostructure
  • Si
  • Strain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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