Abstract
By electron-cyclotron resonance Ar plasma enhanced chemical-vapor deposition, Si and Ge epitaxial growth on Si(100) were achieved without substrate heating using SiH4 and GeH4, respectively, and formation of highly strained nanometer-order heterostructures of Si and Ge was demonstrated. Moreover, on atomic-order nitrided Si(100), Si epitaxial growth without substrate heating was also achieved, and it was confirmed that N atoms of about 0.8 atomic layer are confined within about a 3 nm-thick region under present measurement accuracy. These results open the way to realization of highly strained nanometer-order heterostructures with local doping control.
Original language | English |
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Pages (from-to) | 10-13 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 517 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2008 Nov 3 |
Keywords
- Atomic layer doping
- Chemical vapor deposition (CVD)
- Electron-cyclotron resonance (ECR) plasma
- Epitaxial growth
- Ge
- Heterostructure
- Si
- Strain
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry