Very high resolution photoelectron spectra of NEA-GaAs

Y. Naoi, K. Ito, Y. Uehara, S. Ushioda, Y. Murata

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

The energy distribution of photoelectrons emitted from NEA-GaAs has been measured with a very high energy resolution (ΔE ≈ 5 meV). The sample consists of epitaxially grown p-type GaAs (hole concentration 1 × 1019 cm-3) with a (100) surface. After cleaning the surface by heating in UHV (7 × 10-11 Torr), Cs and O2 were coadsorbed to obtain a NEA surface. A pulsed GaAlAs laser (λ = 820 nm, pulse width = 60 ps) was used for the light source, and the photoelectron energy distribution was measured by a high resolution time-of-flight electron spectrometer. A series of peaks with an approximately regular energy interval of 50 meV was observed in the spectra. Theoretical considerations reveal that the origin of the regular structure are the two-dimensional subbands of electrons at the X-point in the band-bending region near the surface.

Original languageEnglish
Pages (from-to)457-461
Number of pages5
JournalSurface Science
Volume283
Issue number1-3
DOIs
Publication statusPublished - 1993 Mar 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Very high resolution photoelectron spectra of NEA-GaAs'. Together they form a unique fingerprint.

Cite this