TY - JOUR
T1 - Very high resolution photoelectron spectra of NEA-GaAs
AU - Naoi, Y.
AU - Ito, K.
AU - Uehara, Y.
AU - Ushioda, S.
AU - Murata, Y.
N1 - Funding Information:
We would like to thank Dr. M. Ozeki of Fu-jitsu Laboratories,L td. for providingu s with various GaAs samplesu sed in this work. We also acknowledgev aluablec ontributionsb y our earlier graduates tudents,T . Ushiroku, N. Higuchi, A. Hanamura and H. Nitta. This work was supported in part by a Grant-in-Aid for Scientific Research of the Ministry of Education, Science and Culture.
PY - 1993/3/1
Y1 - 1993/3/1
N2 - The energy distribution of photoelectrons emitted from NEA-GaAs has been measured with a very high energy resolution (ΔE ≈ 5 meV). The sample consists of epitaxially grown p-type GaAs (hole concentration 1 × 1019 cm-3) with a (100) surface. After cleaning the surface by heating in UHV (7 × 10-11 Torr), Cs and O2 were coadsorbed to obtain a NEA surface. A pulsed GaAlAs laser (λ = 820 nm, pulse width = 60 ps) was used for the light source, and the photoelectron energy distribution was measured by a high resolution time-of-flight electron spectrometer. A series of peaks with an approximately regular energy interval of 50 meV was observed in the spectra. Theoretical considerations reveal that the origin of the regular structure are the two-dimensional subbands of electrons at the X-point in the band-bending region near the surface.
AB - The energy distribution of photoelectrons emitted from NEA-GaAs has been measured with a very high energy resolution (ΔE ≈ 5 meV). The sample consists of epitaxially grown p-type GaAs (hole concentration 1 × 1019 cm-3) with a (100) surface. After cleaning the surface by heating in UHV (7 × 10-11 Torr), Cs and O2 were coadsorbed to obtain a NEA surface. A pulsed GaAlAs laser (λ = 820 nm, pulse width = 60 ps) was used for the light source, and the photoelectron energy distribution was measured by a high resolution time-of-flight electron spectrometer. A series of peaks with an approximately regular energy interval of 50 meV was observed in the spectra. Theoretical considerations reveal that the origin of the regular structure are the two-dimensional subbands of electrons at the X-point in the band-bending region near the surface.
UR - http://www.scopus.com/inward/record.url?scp=0027553444&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0027553444&partnerID=8YFLogxK
U2 - 10.1016/0039-6028(93)91019-L
DO - 10.1016/0039-6028(93)91019-L
M3 - Article
AN - SCOPUS:0027553444
VL - 283
SP - 457
EP - 461
JO - Surface Science
JF - Surface Science
SN - 0039-6028
IS - 1-3
ER -