Very high performance CMOS on Si(551) surface using radical oxidation silicon flattening technology and accumulation-mode SOI device structure

Weitao Cheng, Akinobu Teramoto, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

In this study, we focus on the good surface flattening characteristics of Si(551) surface using the repeated radical oxidation technology. We demonstrate that the electrical characteristics of the MOSFETs on Si(551) have been obviously improved by introducing the Accumulation-mode device structure. Finally, a very high performance CMOS has been successfully realized on Si(551) surface by combining the radical oxidation silicon flattening technology and Accumulation-mode device structure.

Original languageEnglish
Title of host publicationECS Transactions - ULSI Process Integration 6
Pages115-129
Number of pages15
Edition7
DOIs
Publication statusPublished - 2009 Dec 1
EventULSI Process Integration 6 - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 2009 Oct 42009 Oct 9

Publication series

NameECS Transactions
Number7
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherULSI Process Integration 6 - 216th Meeting of the Electrochemical Society
CountryAustria
CityVienna
Period09/10/409/10/9

ASJC Scopus subject areas

  • Engineering(all)

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