Vertical ultrathin-channel multi-gate MOSFETs (MuGFETs): Technological challenges and future developments

Meishoku Masahara; Yongxun Liu; Kazuhiko Endo; Takashi Matsukawa; Eiichi Suzuki

doi:10.1002/tee.20422

Vertical ultrathin-channel multi-gate MOSFETs (MuGFETs): Technological challenges and future developments

Meishoku Masahara, Yongxun Liu, Kazuhiko Endo, Takashi Matsukawa, Eiichi Suzuki

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

One of the biggest challenges for the VLSI circuits with 32-nm-technology nodes and beyond is to prevent catastrophic increases in power consumption due to short-channel effects. Vertical ultrathin-channel (UTC) multi-gate MOSFETs (MuGFETs) have a promising potential to overcome this issue thanks to their superior SCE immunity due to extremely high electrostatic control of the channel. Before we put vertical UTC MuGFETs to practical use, however, we have to solve several technological problems due to the vertical configuration of the channel. This paper discusses the advantages and challenges of vertical UTC MuGFETs and speculates about their future development.

Original language	English
Pages (from-to)	386-391
Number of pages	6
Journal	IEEJ Transactions on Electrical and Electronic Engineering
Volume	4
Issue number	3
DOIs	https://doi.org/10.1002/tee.20422
Publication status	Published - 2009 Jan 1
Externally published	Yes

Keywords

Channel formation
Impurity doping
Multi-gate MOSFET
Postfabrication V control
Vertical ultrathin channel

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1002/tee.20422

Cite this

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title = "Vertical ultrathin-channel multi-gate MOSFETs (MuGFETs): Technological challenges and future developments",

abstract = "One of the biggest challenges for the VLSI circuits with 32-nm-technology nodes and beyond is to prevent catastrophic increases in power consumption due to short-channel effects. Vertical ultrathin-channel (UTC) multi-gate MOSFETs (MuGFETs) have a promising potential to overcome this issue thanks to their superior SCE immunity due to extremely high electrostatic control of the channel. Before we put vertical UTC MuGFETs to practical use, however, we have to solve several technological problems due to the vertical configuration of the channel. This paper discusses the advantages and challenges of vertical UTC MuGFETs and speculates about their future development.",

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AU - Masahara, Meishoku

AU - Liu, Yongxun

AU - Endo, Kazuhiko

AU - Matsukawa, Takashi

AU - Suzuki, Eiichi

PY - 2009/1/1

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AB - One of the biggest challenges for the VLSI circuits with 32-nm-technology nodes and beyond is to prevent catastrophic increases in power consumption due to short-channel effects. Vertical ultrathin-channel (UTC) multi-gate MOSFETs (MuGFETs) have a promising potential to overcome this issue thanks to their superior SCE immunity due to extremely high electrostatic control of the channel. Before we put vertical UTC MuGFETs to practical use, however, we have to solve several technological problems due to the vertical configuration of the channel. This paper discusses the advantages and challenges of vertical UTC MuGFETs and speculates about their future development.

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KW - Multi-gate MOSFET

KW - Postfabrication V control

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Vertical ultrathin-channel multi-gate MOSFETs (MuGFETs): Technological challenges and future developments

Abstract

Keywords

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