Vertical ultrathin-channel multi-gate MOSFETs (MuGFETs): Technological challenges and future developments

Meishoku Masahara, Yongxun Liu, Kazuhiko Endo, Takashi Matsukawa, Eiichi Suzuki

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


One of the biggest challenges for the VLSI circuits with 32-nm-technology nodes and beyond is to prevent catastrophic increases in power consumption due to short-channel effects. Vertical ultrathin-channel (UTC) multi-gate MOSFETs (MuGFETs) have a promising potential to overcome this issue thanks to their superior SCE immunity due to extremely high electrostatic control of the channel. Before we put vertical UTC MuGFETs to practical use, however, we have to solve several technological problems due to the vertical configuration of the channel. This paper discusses the advantages and challenges of vertical UTC MuGFETs and speculates about their future development.

Original languageEnglish
Pages (from-to)386-391
Number of pages6
JournalIEEJ Transactions on Electrical and Electronic Engineering
Issue number3
Publication statusPublished - 2009 Jan 1
Externally publishedYes


  • Channel formation
  • Impurity doping
  • Multi-gate MOSFET
  • Postfabrication V control
  • Vertical ultrathin channel

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


Dive into the research topics of 'Vertical ultrathin-channel multi-gate MOSFETs (MuGFETs): Technological challenges and future developments'. Together they form a unique fingerprint.

Cite this