Vertical transport properties through pseudo-metallic InAs thin films grown on GaAs (1 1 1)A substrates

Hiroshi Yamaguchi; Yoshiro Hirayama

doi:10.1016/S0022-0248(98)01467-5

Vertical transport properties through pseudo-metallic InAs thin films grown on GaAs (1 1 1)A substrates

Research output: Contribution to journal › Conference article › peer-review

Abstract

The electron transport properties in the growth direction of novel (Al)GaAs/InAs/GaAs structures are examined. Both the InAs/n-GaAs and n-GaAs/InAs heterojunctions formed on (1 1 1)A surfaces showed rectifying characteristics as similar to those of Schottky junctions, demonstrating the possibility of using heterojunctions as a substitution for conventional metal-semiconductor junctions. We have fabricated pseudo-metallic InAs-base transistors in which InAs film is used instead of the metal layer that is used in metal-base transistors. The operation of thermionic-injection hot-electron transistors at room temperature is confirmed.

Original language	English
Pages (from-to)	778-781
Number of pages	4
Journal	Journal of Crystal Growth
Volume	201
DOIs	https://doi.org/10.1016/S0022-0248(98)01467-5
Publication status	Published - 1999 May
Externally published	Yes
Event	Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes Duration: 1998 Aug 31 → 1998 Sep 4

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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@article{9893fb9c8c6e4d27a791fac1017724fc,

title = "Vertical transport properties through pseudo-metallic InAs thin films grown on GaAs (1 1 1)A substrates",

abstract = "The electron transport properties in the growth direction of novel (Al)GaAs/InAs/GaAs structures are examined. Both the InAs/n-GaAs and n-GaAs/InAs heterojunctions formed on (1 1 1)A surfaces showed rectifying characteristics as similar to those of Schottky junctions, demonstrating the possibility of using heterojunctions as a substitution for conventional metal-semiconductor junctions. We have fabricated pseudo-metallic InAs-base transistors in which InAs film is used instead of the metal layer that is used in metal-base transistors. The operation of thermionic-injection hot-electron transistors at room temperature is confirmed.",

author = "Hiroshi Yamaguchi and Yoshiro Hirayama",

year = "1999",

month = may,

doi = "10.1016/S0022-0248(98)01467-5",

language = "English",

volume = "201",

pages = "778--781",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

note = "Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) ; Conference date: 31-08-1998 Through 04-09-1998",

}

TY - JOUR

T1 - Vertical transport properties through pseudo-metallic InAs thin films grown on GaAs (1 1 1)A substrates

AU - Yamaguchi, Hiroshi

AU - Hirayama, Yoshiro

PY - 1999/5

Y1 - 1999/5

N2 - The electron transport properties in the growth direction of novel (Al)GaAs/InAs/GaAs structures are examined. Both the InAs/n-GaAs and n-GaAs/InAs heterojunctions formed on (1 1 1)A surfaces showed rectifying characteristics as similar to those of Schottky junctions, demonstrating the possibility of using heterojunctions as a substitution for conventional metal-semiconductor junctions. We have fabricated pseudo-metallic InAs-base transistors in which InAs film is used instead of the metal layer that is used in metal-base transistors. The operation of thermionic-injection hot-electron transistors at room temperature is confirmed.

AB - The electron transport properties in the growth direction of novel (Al)GaAs/InAs/GaAs structures are examined. Both the InAs/n-GaAs and n-GaAs/InAs heterojunctions formed on (1 1 1)A surfaces showed rectifying characteristics as similar to those of Schottky junctions, demonstrating the possibility of using heterojunctions as a substitution for conventional metal-semiconductor junctions. We have fabricated pseudo-metallic InAs-base transistors in which InAs film is used instead of the metal layer that is used in metal-base transistors. The operation of thermionic-injection hot-electron transistors at room temperature is confirmed.

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U2 - 10.1016/S0022-0248(98)01467-5

DO - 10.1016/S0022-0248(98)01467-5

M3 - Conference article

AN - SCOPUS:0032643206

VL - 201

SP - 778

EP - 781

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

T2 - Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X)

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