Abstract
The electron transport properties in the growth direction of novel (Al)GaAs/InAs/GaAs structures are examined. Both the InAs/n-GaAs and n-GaAs/InAs heterojunctions formed on (1 1 1)A surfaces showed rectifying characteristics as similar to those of Schottky junctions, demonstrating the possibility of using heterojunctions as a substitution for conventional metal-semiconductor junctions. We have fabricated pseudo-metallic InAs-base transistors in which InAs film is used instead of the metal layer that is used in metal-base transistors. The operation of thermionic-injection hot-electron transistors at room temperature is confirmed.
Original language | English |
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Pages (from-to) | 778-781 |
Number of pages | 4 |
Journal | Journal of Crystal Growth |
Volume | 201 |
DOIs | |
Publication status | Published - 1999 May |
Externally published | Yes |
Event | Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes Duration: 1998 Aug 31 → 1998 Sep 4 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry