Vertical transport properties through pseudo-metallic InAs thin films grown on GaAs (1 1 1)A substrates

Hiroshi Yamaguchi, Yoshiro Hirayama

Research output: Contribution to journalConference articlepeer-review

Abstract

The electron transport properties in the growth direction of novel (Al)GaAs/InAs/GaAs structures are examined. Both the InAs/n-GaAs and n-GaAs/InAs heterojunctions formed on (1 1 1)A surfaces showed rectifying characteristics as similar to those of Schottky junctions, demonstrating the possibility of using heterojunctions as a substitution for conventional metal-semiconductor junctions. We have fabricated pseudo-metallic InAs-base transistors in which InAs film is used instead of the metal layer that is used in metal-base transistors. The operation of thermionic-injection hot-electron transistors at room temperature is confirmed.

Original languageEnglish
Pages (from-to)778-781
Number of pages4
JournalJournal of Crystal Growth
Volume201
DOIs
Publication statusPublished - 1999 May
Externally publishedYes
EventProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
Duration: 1998 Aug 311998 Sep 4

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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