Vertical-to-surface transmission electrophotonic device with a pnpn structure and vertical cavity

M. Sugimoto; T. Numai; I. Ogura; Hideo Kosaka; K. Kurihara; K. Kasahara

doi:10.1007/BF00625819

Vertical-to-surface transmission electrophotonic device with a pnpn structure and vertical cavity

M. Sugimoto, T. Numai, I. Ogura, Hideo Kosaka, K. Kurihara, K. Kasahara

Research Institute of Electrical Communication (RIEC)

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Surface emitting laser operation and optical switching operation are demonstrated in vertical-to-surface transmission electrophotonic devices using pnpn structures and vertical cavities. Threshold current density as low as 1.4 kA cm^-2 for laser operation and optical switching energy as low as 2.2 pJ for optical switching operation are achieved. It is found that optical switching energy can be lowered by multireflections in the vertical cavity. Growth rate calibration and series resistance in the distributed Bragg reflector mirrors are examined for device fabrication.

Original language	English
Journal	Optical and Quantum Electronics
Volume	24
Issue number	2
DOIs	https://doi.org/10.1007/BF00625819
Publication status	Published - 1992 Feb 1

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1007/BF00625819

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abstract = "Surface emitting laser operation and optical switching operation are demonstrated in vertical-to-surface transmission electrophotonic devices using pnpn structures and vertical cavities. Threshold current density as low as 1.4 kA cm-2 for laser operation and optical switching energy as low as 2.2 pJ for optical switching operation are achieved. It is found that optical switching energy can be lowered by multireflections in the vertical cavity. Growth rate calibration and series resistance in the distributed Bragg reflector mirrors are examined for device fabrication.",

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T1 - Vertical-to-surface transmission electrophotonic device with a pnpn structure and vertical cavity

AU - Sugimoto, M.

AU - Numai, T.

AU - Ogura, I.

AU - Kosaka, Hideo

AU - Kurihara, K.

AU - Kasahara, K.

PY - 1992/2/1

Y1 - 1992/2/1

N2 - Surface emitting laser operation and optical switching operation are demonstrated in vertical-to-surface transmission electrophotonic devices using pnpn structures and vertical cavities. Threshold current density as low as 1.4 kA cm-2 for laser operation and optical switching energy as low as 2.2 pJ for optical switching operation are achieved. It is found that optical switching energy can be lowered by multireflections in the vertical cavity. Growth rate calibration and series resistance in the distributed Bragg reflector mirrors are examined for device fabrication.

AB - Surface emitting laser operation and optical switching operation are demonstrated in vertical-to-surface transmission electrophotonic devices using pnpn structures and vertical cavities. Threshold current density as low as 1.4 kA cm-2 for laser operation and optical switching energy as low as 2.2 pJ for optical switching operation are achieved. It is found that optical switching energy can be lowered by multireflections in the vertical cavity. Growth rate calibration and series resistance in the distributed Bragg reflector mirrors are examined for device fabrication.

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JF - Optical and Quantum Electronics

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IS - 2

ER -

Vertical-to-surface transmission electrophotonic device with a pnpn structure and vertical cavity

Abstract

ASJC Scopus subject areas

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