Vertical resonant tunneling transistors with molecular quantum dots for large-scale integration

Ryoma Hayakawa, Toyohiro Chikyow, Yutaka Wakayama

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Quantum molecular devices have a potential for the construction of new data processing architectures that cannot be achieved using current complementary metal-oxide-semiconductor (CMOS) technology. The relevant basic quantum transport properties have been examined by specific methods such as scanning probe and break-junction techniques. However, these methodologies are not compatible with current CMOS applications, and the development of practical molecular devices remains a persistent challenge. Here, we demonstrate a new vertical resonant tunneling transistor for large-scale integration. The transistor channel is comprised of a MOS structure with C60 molecules as quantum dots, and the structure behaves like a double tunnel junction. Notably, the transistors enabled the observation of stepwise drain currents, which originated from resonant tunneling via the discrete molecular orbitals. Applying side-gate voltages produced depletion layers in Si substrates, to achieve effective modulation of the drain currents and obvious peak shifts in the differential conductance curves. Our device configuration thus provides a promising means of integrating molecular functions into future CMOS applications.

Original languageEnglish
Pages (from-to)11297-11302
Number of pages6
Issue number31
Publication statusPublished - 2017 Aug 21
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)


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