TY - JOUR
T1 - Vertical-electrical-field-induced control of the exciton fine structure splitting in GaAs island quantum dots for the generation of polarization- entangled photons
AU - Ghali, Mohsen
AU - Ohtani, Keita
AU - Ohno, Yuzo
AU - Ohno, Hideo
PY - 2012/6/1
Y1 - 2012/6/1
N2 - We report on the polarization-resolved photoluminescence spectroscopy of a single GaAs island quantum dot (QD) formed by the monolayer thickness fluctuation of a GaAs/Al 0.3Ga 0.7As quantum well and embedded in a Schottky device. By applying a forward vertical electric field between the top metallic contact and the sample substrate we suppress the QD excitonic fine structure splitting to ≈1:5 μeV. These results open the door toward the possible generation of visible entangled photon pairs using GaAs island QDs.
AB - We report on the polarization-resolved photoluminescence spectroscopy of a single GaAs island quantum dot (QD) formed by the monolayer thickness fluctuation of a GaAs/Al 0.3Ga 0.7As quantum well and embedded in a Schottky device. By applying a forward vertical electric field between the top metallic contact and the sample substrate we suppress the QD excitonic fine structure splitting to ≈1:5 μeV. These results open the door toward the possible generation of visible entangled photon pairs using GaAs island QDs.
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U2 - 10.1143/JJAP.51.06FE14
DO - 10.1143/JJAP.51.06FE14
M3 - Article
AN - SCOPUS:84863308685
VL - 51
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6 PART 2
M1 - 06FE14
ER -