Vertical-electrical-field-induced control of the exciton fine structure splitting in GaAs island quantum dots for the generation of polarization- entangled photons

Mohsen Ghali, Keita Ohtani, Yuzo Ohno, Hideo Ohno

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report on the polarization-resolved photoluminescence spectroscopy of a single GaAs island quantum dot (QD) formed by the monolayer thickness fluctuation of a GaAs/Al 0.3Ga 0.7As quantum well and embedded in a Schottky device. By applying a forward vertical electric field between the top metallic contact and the sample substrate we suppress the QD excitonic fine structure splitting to ≈1:5 μeV. These results open the door toward the possible generation of visible entangled photon pairs using GaAs island QDs.

Original languageEnglish
Article number06FE14
JournalJapanese journal of applied physics
Volume51
Issue number6 PART 2
DOIs
Publication statusPublished - 2012 Jun 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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