Abstract
We report on the polarization-resolved photoluminescence spectroscopy of a single GaAs island quantum dot (QD) formed by the monolayer thickness fluctuation of a GaAs/Al 0.3Ga 0.7As quantum well and embedded in a Schottky device. By applying a forward vertical electric field between the top metallic contact and the sample substrate we suppress the QD excitonic fine structure splitting to ≈1:5 μeV. These results open the door toward the possible generation of visible entangled photon pairs using GaAs island QDs.
| Original language | English |
|---|---|
| Article number | 06FE14 |
| Journal | Japanese journal of applied physics |
| Volume | 51 |
| Issue number | 6 PART 2 |
| DOIs | |
| Publication status | Published - 2012 Jun 1 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Ghali, M., Ohtani, K., Ohno, Y., & Ohno, H. (2012). Vertical-electrical-field-induced control of the exciton fine structure splitting in GaAs island quantum dots for the generation of polarization- entangled photons. Japanese journal of applied physics, 51(6 PART 2), [06FE14]. https://doi.org/10.1143/JJAP.51.06FE14