We report on the polarization-resolved photoluminescence spectroscopy of a single GaAs island quantum dot (QD) formed by the monolayer thickness fluctuation of a GaAs/Al 0.3Ga 0.7As quantum well and embedded in a Schottky device. By applying a forward vertical electric field between the top metallic contact and the sample substrate we suppress the QD excitonic fine structure splitting to ≈1:5 μeV. These results open the door toward the possible generation of visible entangled photon pairs using GaAs island QDs.
ASJC Scopus subject areas
- Physics and Astronomy(all)