Vertical electric field tuning of the exciton fine structure splitting and photon correlation measurements of GaAs quantum dot

S. Marcet, K. Ohtani, Hideo Ohno

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

The effects of a vertical electric field on the fine structure splitting of neutral exciton of monolayer fluctuation GaAs quantum dots were investigated. Using the gate voltage between the top gate electrode and the bottom n-GaAs substrate, the fine structure splitting of the neutral exciton was tuned to 15-30 μeV. Photon correlation measurements demonstrate neutral exciton single photon emission and neutral exciton-biexciton cascaded emission.

Original languageEnglish
Article number101117
JournalApplied Physics Letters
Volume96
Issue number10
DOIs
Publication statusPublished - 2010 Mar 26

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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