Abstract
We report experimentally on fine structure splitting (FSS) of various excitonic transitions in single GaAs island quantum dots, formed by a monolayer thickness fluctuation in the narrow GaAs/AlGaAs quantum well, and embedded in an n-i-Schottky diode device. By applying a forward vertical electric field (F) between the top metallic contact and the sample substrate, we observed an in-plane polarization rotation of both the ground and the excited state excitons with increasing the electric field. The polarization rotations were accompanied with a strong decrease in the FSS of the ground as well as the excited state excitons with the field, until the FSS vanished as F approached 30kV/cm.
Original language | English |
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Article number | 123102 |
Journal | Applied Physics Letters |
Volume | 107 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2015 Sep 21 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)