Vertical electric field induced suppression of fine structure splitting of excited state excitons in a single GaAs/AlGaAs island quantum dots

Mohsen Ghali; Yuzo Ohno; Hideo Ohno

doi:10.1063/1.4931360

Vertical electric field induced suppression of fine structure splitting of excited state excitons in a single GaAs/AlGaAs island quantum dots

Mohsen Ghali, Yuzo Ohno, Hideo Ohno

Leadership

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We report experimentally on fine structure splitting (FSS) of various excitonic transitions in single GaAs island quantum dots, formed by a monolayer thickness fluctuation in the narrow GaAs/AlGaAs quantum well, and embedded in an n-i-Schottky diode device. By applying a forward vertical electric field (F) between the top metallic contact and the sample substrate, we observed an in-plane polarization rotation of both the ground and the excited state excitons with increasing the electric field. The polarization rotations were accompanied with a strong decrease in the FSS of the ground as well as the excited state excitons with the field, until the FSS vanished as F approached 30kV/cm.

Original language	English
Article number	123102
Journal	Applied Physics Letters
Volume	107
Issue number	12
DOIs	https://doi.org/10.1063/1.4931360
Publication status	Published - 2015 Sep 21

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4931360

Fingerprint Dive into the research topics of 'Vertical electric field induced suppression of fine structure splitting of excited state excitons in a single GaAs/AlGaAs island quantum dots'. Together they form a unique fingerprint.

Cite this

@article{43eb88a99fd94b9a94dfc7c91ed4a0c3,

title = "Vertical electric field induced suppression of fine structure splitting of excited state excitons in a single GaAs/AlGaAs island quantum dots",

abstract = "We report experimentally on fine structure splitting (FSS) of various excitonic transitions in single GaAs island quantum dots, formed by a monolayer thickness fluctuation in the narrow GaAs/AlGaAs quantum well, and embedded in an n-i-Schottky diode device. By applying a forward vertical electric field (F) between the top metallic contact and the sample substrate, we observed an in-plane polarization rotation of both the ground and the excited state excitons with increasing the electric field. The polarization rotations were accompanied with a strong decrease in the FSS of the ground as well as the excited state excitons with the field, until the FSS vanished as F approached 30kV/cm.",

author = "Mohsen Ghali and Yuzo Ohno and Hideo Ohno",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

month = sep,

day = "21",

doi = "10.1063/1.4931360",

language = "English",

volume = "107",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Vertical electric field induced suppression of fine structure splitting of excited state excitons in a single GaAs/AlGaAs island quantum dots

AU - Ghali, Mohsen

AU - Ohno, Yuzo

AU - Ohno, Hideo

PY - 2015/9/21

Y1 - 2015/9/21

N2 - We report experimentally on fine structure splitting (FSS) of various excitonic transitions in single GaAs island quantum dots, formed by a monolayer thickness fluctuation in the narrow GaAs/AlGaAs quantum well, and embedded in an n-i-Schottky diode device. By applying a forward vertical electric field (F) between the top metallic contact and the sample substrate, we observed an in-plane polarization rotation of both the ground and the excited state excitons with increasing the electric field. The polarization rotations were accompanied with a strong decrease in the FSS of the ground as well as the excited state excitons with the field, until the FSS vanished as F approached 30kV/cm.

AB - We report experimentally on fine structure splitting (FSS) of various excitonic transitions in single GaAs island quantum dots, formed by a monolayer thickness fluctuation in the narrow GaAs/AlGaAs quantum well, and embedded in an n-i-Schottky diode device. By applying a forward vertical electric field (F) between the top metallic contact and the sample substrate, we observed an in-plane polarization rotation of both the ground and the excited state excitons with increasing the electric field. The polarization rotations were accompanied with a strong decrease in the FSS of the ground as well as the excited state excitons with the field, until the FSS vanished as F approached 30kV/cm.

UR - http://www.scopus.com/inward/record.url?scp=84942589017&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84942589017&partnerID=8YFLogxK

U2 - 10.1063/1.4931360

DO - 10.1063/1.4931360

M3 - Article

AN - SCOPUS:84942589017

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

M1 - 123102

ER -

Vertical electric field induced suppression of fine structure splitting of excited state excitons in a single GaAs/AlGaAs island quantum dots

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this