Vertical electric field induced suppression of fine structure splitting of excited state excitons in a single GaAs/AlGaAs island quantum dots

Mohsen Ghali; Yuzo Ohno; Hideo Ohno

doi:10.1063/1.4931360

Vertical electric field induced suppression of fine structure splitting of excited state excitons in a single GaAs/AlGaAs island quantum dots

Mohsen Ghali, Yuzo Ohno, Hideo Ohno

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Abstract

We report experimentally on fine structure splitting (FSS) of various excitonic transitions in single GaAs island quantum dots, formed by a monolayer thickness fluctuation in the narrow GaAs/AlGaAs quantum well, and embedded in an n-i-Schottky diode device. By applying a forward vertical electric field (F) between the top metallic contact and the sample substrate, we observed an in-plane polarization rotation of both the ground and the excited state excitons with increasing the electric field. The polarization rotations were accompanied with a strong decrease in the FSS of the ground as well as the excited state excitons with the field, until the FSS vanished as F approached 30kV/cm.

Original language	English
Article number	123102
Journal	Applied Physics Letters
Volume	107
Issue number	12
DOIs	https://doi.org/10.1063/1.4931360
Publication status	Published - 2015 Sep 21

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Ghali, M., Ohno, Y., & Ohno, H. (2015). Vertical electric field induced suppression of fine structure splitting of excited state excitons in a single GaAs/AlGaAs island quantum dots. Applied Physics Letters, 107(12), [123102]. https://doi.org/10.1063/1.4931360

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