Vertical electric field induced suppression of fine structure splitting of excited state excitons in a single GaAs/AlGaAs island quantum dots

Mohsen Ghali, Yuzo Ohno, Hideo Ohno

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report experimentally on fine structure splitting (FSS) of various excitonic transitions in single GaAs island quantum dots, formed by a monolayer thickness fluctuation in the narrow GaAs/AlGaAs quantum well, and embedded in an n-i-Schottky diode device. By applying a forward vertical electric field (F) between the top metallic contact and the sample substrate, we observed an in-plane polarization rotation of both the ground and the excited state excitons with increasing the electric field. The polarization rotations were accompanied with a strong decrease in the FSS of the ground as well as the excited state excitons with the field, until the FSS vanished as F approached 30kV/cm.

Original languageEnglish
Article number123102
JournalApplied Physics Letters
Volume107
Issue number12
DOIs
Publication statusPublished - 2015 Sep 21

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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