Vertical double-gate MOSFET device technology

Meishoku Masahara, Yongxun Liu, Kazuhiko Endo, Takashi Matsukawa, Eiichi Suzuki

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The Silicon device technology is facing to several difficulties. Especially, explosion of power consumption due to short channel effects (SCEs) becomes the biggest issue in f urther device scaling down. Fortunately, double-gate (DG) MOSFETs have promising potential to overcome this obstacle. The DG-MOSFET is recognized to be the most scalable MOSFET for its high SCEs immunity. In addition, independent DG-MOSFET (4T-DG-MOSFET) has great advantage to enable the threshold voltage control for the flexible power management. Through this work, we have realized ideal DG-MOSFETs using newly-developed vertical DG-MOSFET device technology. This article presents the effectiveness of the vertical DG-MOSFETs in future high-performance and ultra-low-power CMOS circuits.

Original languageEnglish
Pages (from-to)702-707+2
JournalIEEJ Transactions on Electronics, Information and Systems
Volume126
Issue number6
DOIs
Publication statusPublished - 2006
Externally publishedYes

Keywords

  • 4-terminal DG-MOSFET
  • IBRE
  • SCEs
  • Vertical-type DG-MOSFET

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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