The Silicon device technology is facing to several difficulties. Especially, explosion of power consumption due to short channel effects (SCEs) becomes the biggest issue in f urther device scaling down. Fortunately, double-gate (DG) MOSFETs have promising potential to overcome this obstacle. The DG-MOSFET is recognized to be the most scalable MOSFET for its high SCEs immunity. In addition, independent DG-MOSFET (4T-DG-MOSFET) has great advantage to enable the threshold voltage control for the flexible power management. Through this work, we have realized ideal DG-MOSFETs using newly-developed vertical DG-MOSFET device technology. This article presents the effectiveness of the vertical DG-MOSFETs in future high-performance and ultra-low-power CMOS circuits.
|Journal||IEEJ Transactions on Electronics, Information and Systems|
|Publication status||Published - 2006|
- 4-terminal DG-MOSFET
- Vertical-type DG-MOSFET
ASJC Scopus subject areas
- Electrical and Electronic Engineering