Vertex Channel Field Effect Transistor (VC-FET) technology featuring high performance and highly manufacturable trench capacitor DRAM

M. Kido, M. Kito, R. Katsumata, M. Kondo, S. Ito, K. Matsuo, K. Miyano, I. Mizushima, M. Sato, H. Tanaka, H. Yasutake, Y. Nagata, T. Hoshino, N. Aoki, H. Aochi, Akihiro Nitayama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

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Engineering & Materials Science