Vertex Channel Field Effect Transistor (VC-FET) technology featuring high performance and highly manufacturable trench capacitor DRAM

M. Kido, M. Kito, R. Katsumata, M. Kondo, S. Ito, K. Matsuo, K. Miyano, I. Mizushima, M. Sato, H. Tanaka, H. Yasutake, Y. Nagata, T. Hoshino, N. Aoki, H. Aochi, Akihiro Nitayama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Vertex channel (VC) transistor is applied to both support devices and array transistor of trench capacitor DRAM for the first time. On-current of VC-FETs is much higher than that of conventional planar devices with keeping sufficiently small off-current. They achieve 15% or much smaller propagation delay (Tpd) of fan-out 3 than planar devices. Furthermore, 1.6 times of on-current as a planar array transistor is achieved by the combination of VCAT and P+poly gate without degradation of retention characteristics.

Original languageEnglish
Title of host publication2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers
Pages36-37
Number of pages2
Publication statusPublished - 2006 Dec 1
Event2006 Symposium on VLSI Technology, VLSIT - Honolulu, HI, United States
Duration: 2006 Jun 132006 Jun 15

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2006 Symposium on VLSI Technology, VLSIT
CountryUnited States
CityHonolulu, HI
Period06/6/1306/6/15

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Kido, M., Kito, M., Katsumata, R., Kondo, M., Ito, S., Matsuo, K., Miyano, K., Mizushima, I., Sato, M., Tanaka, H., Yasutake, H., Nagata, Y., Hoshino, T., Aoki, N., Aochi, H., & Nitayama, A. (2006). Vertex Channel Field Effect Transistor (VC-FET) technology featuring high performance and highly manufacturable trench capacitor DRAM. In 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers (pp. 36-37). [1705204] (Digest of Technical Papers - Symposium on VLSI Technology).