Vertex Channel Array Transistor (VCAT) featuring sub-60nm high performance and highly manufacturable trench capacitor DRAM

M. Kito, R. Katsumata, M. Kondo, S. Ito, K. Miyano, M. Kido, H. Yasutake, Y. Nagata, N. Aoki, H. Aochi, Akihiro Nitayama

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Novel vertex channel array transistor (VCAT) fabricated on bulk silicon substrate is applied to trench capacitor DRAM cell for the first time. VCAT utilizes the vertexes as channel between top surface and (111) facet of selective epitaxial Si on active areas. It can be fabricated with much simpler process than FIN array transistor reported previously and fit to the process integration of trench capacitor DRAM cell. Almost 2 times higher on-current, smaller sub-threshold swing and less body effect than a conventional planar array transistor are demonstrated.

Original languageEnglish
Article number1469200
Pages (from-to)32-33
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Volume2005
DOIs
Publication statusPublished - 2005 Dec 1
Event2005 Symposium on VLSI Technology - Kyoto, Japan
Duration: 2005 Jun 142005 Jun 14

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Kito, M., Katsumata, R., Kondo, M., Ito, S., Miyano, K., Kido, M., Yasutake, H., Nagata, Y., Aoki, N., Aochi, H., & Nitayama, A. (2005). Vertex Channel Array Transistor (VCAT) featuring sub-60nm high performance and highly manufacturable trench capacitor DRAM. Digest of Technical Papers - Symposium on VLSI Technology, 2005, 32-33. [1469200]. https://doi.org/10.1109/.2005.1469200