Novel vertex channel array transistor (VCAT) fabricated on bulk silicon substrate is applied to trench capacitor DRAM cell for the first time. VCAT utilizes the vertexes as channel between top surface and (111) facet of selective epitaxial Si on active areas. It can be fabricated with much simpler process than FIN array transistor reported previously and fit to the process integration of trench capacitor DRAM cell. Almost 2 times higher on-current, smaller sub-threshold swing and less body effect than a conventional planar array transistor are demonstrated.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 2005 Dec 1|
|Event||2005 Symposium on VLSI Technology - Kyoto, Japan|
Duration: 2005 Jun 14 → 2005 Jun 14
ASJC Scopus subject areas
- Electrical and Electronic Engineering