Versatile wafer-level hermetic packaging technology using anodically-bondable LTCC wafer with compliant porous gold bumps spontaneously formed in wet-etched cavities

Shuji Tanaka, Mamoru Mohri, Atsushi Okada, Hideyuki Fukushi, Masayoshi Esashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

This paper reports simple and versatile technology for hermetically capping MEMS with a wet-etched LTCC (low temperature cofired ceramic) wafer by standard anodic bonding process, in which the MEMS and Au vias in the LTCC wafer are electrically connected by porous Au bumps. The porous Au bump is spontaneously formed from a part of the Au via by wet-etching the LTCC wafer, because glass-based filler in the Au via is etched away and leaves pores. Excellent compliance of the porous Au bump absorbs error in the height of the electrodes etc. The wet-etched LTCC wafer was anodically bonded with an SOI wafer with diaphragms and Au electrodes under a standard condition. 100 % yield of both hermetic sealing and electrical connection was confirmed. A thermal shock test was performed, and no significant change of sealing pressure and the resistance of electrical connections was observed at least up to 3000 cycles.

Original languageEnglish
Title of host publication2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012
Pages369-372
Number of pages4
DOIs
Publication statusPublished - 2012 May 7
Event2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012 - Paris, France
Duration: 2012 Jan 292012 Feb 2

Publication series

NameProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN (Print)1084-6999

Other

Other2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012
CountryFrance
CityParis
Period12/1/2912/2/2

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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