Verification of a governing parameter for electromigration damage in bamboo lines

Kazuhiko Sasagawa, Kazushi Naito, Masataka Hasegawa, Masumi Saka, Hiroyuki Abé

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)

Abstract

The high current density due to scaling down of integrated circuits causes electromigration in the metal line. A calculation method of the atomic flux divergence due to electromigration, AFDgen, has been proposed considering two-dimensional distributions of current density and temperature and also simply considering the line structure of not only polycrystalline line but also bamboo line. And the usefulness of AFDgen for polycrystalline lines has been verified experimentally. On the other hand, the usefulness of AFDgen for bamboo line was recently verified considering various temperature distributions, but it has not yet been verified considering various current density distributions. In this study, electromigration in angled bamboo lines is treated for the verification of AFDgen for bamboo lines considering not only temperature distribution but also current density distribution. The rationality of AFDgen for bamboo lines is discussed in more detail in comparison of the prediction of void formation using AFDgen with experiment.

Original languageEnglish
Publication statusPublished - 1999 Dec 1
EventInterPACK '99: Pacific RIM/ASME International Intersociety Electronics Photonic Packaging Conference 'Advances in Electronic Packaging 1999' - Maui, HI, USA
Duration: 1999 Jun 131999 Jun 19

Other

OtherInterPACK '99: Pacific RIM/ASME International Intersociety Electronics Photonic Packaging Conference 'Advances in Electronic Packaging 1999'
CityMaui, HI, USA
Period99/6/1399/6/19

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering

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