The high current density due to scaling down of integrated circuits causes electromigration in the metal line. A calculation method of the atomic flux divergence due to electromigration, AFDgen, has been proposed considering two-dimensional distributions of current density and temperature and also simply considering the line structure of not only polycrystalline line but also bamboo line. And the usefulness of AFDgen for polycrystalline lines has been verified experimentally. On the other hand, the usefulness of AFDgen for bamboo line was recently verified considering various temperature distributions, but it has not yet been verified considering various current density distributions. hi this study, electromigration in angled bamboo lines is treated for the verification of AFDgen for bamboo lines considering not only temperature distribution but also current density distribution. The rationality of AFDgen for bamboo lines is discussed in more detail in comparison of the prediction of void formation using AFDgen with experiment.
|Number of pages||6|
|Journal||American Society of Mechanical Engineers, EEP|
|Publication status||Published - 1999|
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Mechanical Engineering